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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201904319
|2 doi
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|a pubmed24n1004.xml
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|a (DE-627)NLM301410968
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|a (NLM)31532872
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Yuan, Shuai
|e verfasserin
|4 aut
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|a Optimization of Low-Dimensional Components of Quasi-2D Perovskite Films for Deep-Blue Light-Emitting Diodes
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 05.11.2019
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Compared to efficient green and near-infrared light-emitting diodes (LEDs), less progress has been made on deep-blue perovskite LEDs. They suffer from inefficient domain [various number of PbX6 - layers (n)] control, resulting in a series of unfavorable issues such as unstable color, multipeak profile, and poor fluorescence yield. Here, a strategy involving a delicate spacer modulation for quasi-2D perovskite films via an introduction of aromatic polyamine molecules into the perovskite precursor is reported. With low-dimensional component engineering, the n1 domain, which shows nonradiative recombination and retarded exciton transfer, is significantly suppressed. Also, the n3 domain, which represents the population of emission species, is remarkably increased. The optimized quasi-2D perovskite film presents blue emission from the n3 domain (peak at 465 nm) with a photoluminescence quantum yield (PLQY) as high as 77%. It enables the corresponding perovskite LEDs to deliver stable deep-blue emission (CIE (0.145, 0.05)) with an external quantum efficiency (EQE) of 2.6%. The findings in this work provide further understanding on the structural and emission properties of quasi-2D perovskites, which pave a new route to design deep-blue-emissive perovskite materials
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|a Journal Article
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|a color stability
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|a deep-blue emission
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|a domain distribution
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|a light-emitting diodes
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|a quasi-2D perovskite
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|a Wang, Zhao-Kui
|e verfasserin
|4 aut
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1 |
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|a Xiao, Lei-Xin
|e verfasserin
|4 aut
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|a Zhang, Chun-Feng
|e verfasserin
|4 aut
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|a Yang, Sheng-Yi
|e verfasserin
|4 aut
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|a Chen, Bing-Bing
|e verfasserin
|4 aut
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1 |
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|a Ge, Hui-Ting
|e verfasserin
|4 aut
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|a Tian, Qi-Sheng
|e verfasserin
|4 aut
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|a Jin, Yan
|e verfasserin
|4 aut
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|a Liao, Liang-Sheng
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 44 vom: 11. Nov., Seite e1904319
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:31
|g year:2019
|g number:44
|g day:11
|g month:11
|g pages:e1904319
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|u http://dx.doi.org/10.1002/adma.201904319
|3 Volltext
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|a AR
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|d 31
|j 2019
|e 44
|b 11
|c 11
|h e1904319
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