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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201904194
|2 doi
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|a pubmed24n1004.xml
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|a (DE-627)NLM301209227
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|a (NLM)31512307
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|a DE-627
|b ger
|c DE-627
|e rakwb
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| 041 |
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|a eng
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| 100 |
1 |
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|a Lee, Jae-Bok
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Direct Synthesis of a Self-Assembled WSe2 /MoS2 Heterostructure Array and its Optoelectrical Properties
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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| 500 |
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|a Date Completed 25.10.2019
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Functional van der Waals heterojunctions of transition metal dichalcogenides are emerging as a potential candidate for the basis of next-generation logic devices and optoelectronics. However, the complexity of synthesis processes so far has delayed the successful integration of the heterostructure device array within a large scale, which is necessary for practical applications. Here, a direct synthesis method is introduced to fabricate an array of self-assembled WSe2 /MoS2 heterostructures through facile solution-based directional precipitation. By manipulating the internal convection flow (i.e., Marangoni flow) of the solution, the WSe2 wires are selectively stacked over the MoS2 wires at a specific angle, which enables the formation of parallel- and cross-aligned heterostructures. The realized WSe2 /MoS2 -based p-n heterojunction shows not only high rectification (ideality factor: 1.18) but also promising optoelectrical properties with a high responsivity of 5.39 A W-1 and response speed of 16 µs. As a feasible application, a WSe2 /MoS2 -based photodiode array (10 × 10) is demonstrated, which proves that the photosensing system can detect the position and intensity of an external light source. The solution-based growth of hierarchical structures with various alignments could offer a method for the further development of large-area electronic and optoelectronic applications
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|a Journal Article
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|a Marangoni flow
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4 |
|a heterojunctions
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4 |
|a p-n junctions
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4 |
|a photodetectors
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| 650 |
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4 |
|a transition-metal dichalcogenides
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| 700 |
1 |
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|a Lim, Yi Rang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Katiyar, Ajit K
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Song, Wooseok
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lim, Jongsun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Bae, Sukang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Tae-Wook
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Seoung-Ki
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ahn, Jong-Hyun
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 43 vom: 22. Okt., Seite e1904194
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:31
|g year:2019
|g number:43
|g day:22
|g month:10
|g pages:e1904194
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|u http://dx.doi.org/10.1002/adma.201904194
|3 Volltext
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|a AR
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|d 31
|j 2019
|e 43
|b 22
|c 10
|h e1904194
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