Asymmetric response of electrical conductivity and V valence state to strain in cation-deficient Sr1-yVO3 ultrathin films based on absorption measurements at the V L2- and L3-edges
The correlation between electronic properties and epitaxial strain in a cation-deficient system has rarely been investigated. Cation-deficient SrVO3 films are taken as a model system to investigate the strain-dependent electrical and electronic properties. Using element- and charge-sensitive soft X-...
Publié dans: | Journal of synchrotron radiation. - 1994. - 26(2019), Pt 5 vom: 01. Sept., Seite 1687-1693 |
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Auteur principal: | |
Autres auteurs: | , , , , , |
Format: | Article en ligne |
Langue: | English |
Publié: |
2019
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Accès à la collection: | Journal of synchrotron radiation |
Sujets: | Journal Article 3d transition metal oxides soft X-ray absorption measurements thickness-dependent properties thin-film engineering |
Résumé: | The correlation between electronic properties and epitaxial strain in a cation-deficient system has rarely been investigated. Cation-deficient SrVO3 films are taken as a model system to investigate the strain-dependent electrical and electronic properties. Using element- and charge-sensitive soft X-ray absorption, V L-edge absorption measurements have been performed for Sr1-yVO3 films of different thicknesses capped with 4 u.c. (unit cell) SrTiO3 layers, showing the coexistence of V4+ and V5+ in thick films. A different correlation between V valence state and epitaxial strain is observed for Sr1-yVO3 ultrathin films, i.e. a variation in V valence state is only observed for tensile-strained films. Sr1-yVO3 thin films are metallic and exhibit a thickness-driven metal-insulator transition at different critical thicknesses for tensile and compressive strains. The asymmetric response of electrical conductivity to strain observed in cation-deficient Sr1-yVO3 films will be beneficial for functional oxide electronic devices |
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Description: | Date Completed 10.09.2019 Date Revised 10.09.2019 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
ISSN: | 1600-5775 |
DOI: | 10.1107/S1600577519007094 |