Asymmetric response of electrical conductivity and V valence state to strain in cation-deficient Sr1-yVO3 ultrathin films based on absorption measurements at the V L2- and L3-edges

The correlation between electronic properties and epitaxial strain in a cation-deficient system has rarely been investigated. Cation-deficient SrVO3 films are taken as a model system to investigate the strain-dependent electrical and electronic properties. Using element- and charge-sensitive soft X-...

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Détails bibliographiques
Publié dans:Journal of synchrotron radiation. - 1994. - 26(2019), Pt 5 vom: 01. Sept., Seite 1687-1693
Auteur principal: Wu, Meng (Auteur)
Autres auteurs: Huang, Si Zhao, Zeng, Hui, Koster, Gertjan, Huang, Yu Yang, Zheng, Jin Cheng, Wang, Hui Qiong
Format: Article en ligne
Langue:English
Publié: 2019
Accès à la collection:Journal of synchrotron radiation
Sujets:Journal Article 3d transition metal oxides soft X-ray absorption measurements thickness-dependent properties thin-film engineering
Description
Résumé:The correlation between electronic properties and epitaxial strain in a cation-deficient system has rarely been investigated. Cation-deficient SrVO3 films are taken as a model system to investigate the strain-dependent electrical and electronic properties. Using element- and charge-sensitive soft X-ray absorption, V L-edge absorption measurements have been performed for Sr1-yVO3 films of different thicknesses capped with 4 u.c. (unit cell) SrTiO3 layers, showing the coexistence of V4+ and V5+ in thick films. A different correlation between V valence state and epitaxial strain is observed for Sr1-yVO3 ultrathin films, i.e. a variation in V valence state is only observed for tensile-strained films. Sr1-yVO3 thin films are metallic and exhibit a thickness-driven metal-insulator transition at different critical thicknesses for tensile and compressive strains. The asymmetric response of electrical conductivity to strain observed in cation-deficient Sr1-yVO3 films will be beneficial for functional oxide electronic devices
Description:Date Completed 10.09.2019
Date Revised 10.09.2019
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1600-5775
DOI:10.1107/S1600577519007094