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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201903686
|2 doi
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|a pubmed24n1003.xml
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|a (DE-627)NLM300987145
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|a (NLM)31489725
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|a DE-627
|b ger
|c DE-627
|e rakwb
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| 041 |
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|a eng
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| 100 |
1 |
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|a Jing, Yumei
|e verfasserin
|4 aut
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| 245 |
1 |
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|a A Single-Electron Transistor Made of a 3D Topological Insulator Nanoplate
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| 264 |
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|c 2019
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| 336 |
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 16.10.2019
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Quantum confined devices of 3D topological insulators are proposed to be promising and of great importance for studies of confined topological states and for applications in low-energy-dissipative spintronics and quantum information processing. The absence of energy gap on the topological insulator surface limits the experimental realization of a quantum confined system in 3D topological insulators. Here, the successful realization of single-electron transistor devices in Bi2 Te3 nanoplates using state-of-the-art nanofabrication techniques is reported. Each device consists of a confined central island, two narrow constrictions that connect the central island to the source and drain, and surrounding gates. Low-temperature transport measurements demonstrate that the two narrow constrictions function as tunneling junctions and the device shows well-defined Coulomb current oscillations and Coulomb-diamond-shaped charge-stability diagrams. This work provides a controllable and reproducible way to form quantum confined systems in 3D topological insulators, which should greatly stimulate research toward confined topological states, low-energy-dissipative devices, and quantum information processing
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|a Journal Article
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4 |
|a Coulomb blockade
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| 650 |
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4 |
|a bismuth telluride
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| 650 |
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4 |
|a single-electron transistors
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| 650 |
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4 |
|a topological insulators
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| 700 |
1 |
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|a Huang, Shaoyun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Jinxiong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Meng, Mengmeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Xiaobo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhou, Yu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Peng, Hailin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xu, Hongqi
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 42 vom: 07. Okt., Seite e1903686
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:31
|g year:2019
|g number:42
|g day:07
|g month:10
|g pages:e1903686
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| 856 |
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|u http://dx.doi.org/10.1002/adma.201903686
|3 Volltext
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|d 31
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