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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201903779
|2 doi
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|a pubmed24n1001.xml
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|a (DE-627)NLM300338732
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|a (NLM)31423650
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Yu, Wei
|e verfasserin
|4 aut
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|a Chemically Exfoliated VSe2 Monolayers with Room-Temperature Ferromagnetism
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 04.10.2019
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Among van der Waals layered ferromagnets, monolayer vanadium diselenide (VSe2 ) stands out due to its robust ferromagnetism. However, the exfoliation of monolayer VSe2 is challenging, not least because the monolayer flake is extremely unstable in air. Using an electrochemical exfoliation approach with organic cations as the intercalants, monolayer 1T-VSe2 flakes are successfully obtained from the bulk crystal at high yield. Thiol molecules are further introduced onto the VSe2 surface to passivate the exfoliated flakes, which improves the air stability of the flakes for subsequent characterizations. Room-temperature ferromagnetism is confirmed on the exfoliated 2D VSe2 flakes using a superconducting quantum interference device (SQUID), X-ray magnetic circular dichroism (XMCD), and magnetic force microscopy (MFM), where the monolayer flake displays the strongest ferromagnetic properties. Se vacancies, which can be ubiquitous in such materials, also contribute to the ferromagnetism of VSe2 , although density functional theory (DFT) calculations show that such effect can be minimized by physisorbed oxygen molecules or covalently bound thiol molecules
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|a Journal Article
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|a 2D ferromagnetism
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|a VSe2 monolayers
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|a chemical exfoliation
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|a covalent passivation
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|a vacancy enhanced ferromagnetism
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|a Li, Jing
|e verfasserin
|4 aut
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|a Herng, Tun Seng
|e verfasserin
|4 aut
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|a Wang, Zishen
|e verfasserin
|4 aut
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|a Zhao, Xiaoxu
|e verfasserin
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|a Chi, Xiao
|e verfasserin
|4 aut
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|a Fu, Wei
|e verfasserin
|4 aut
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|a Abdelwahab, Ibrahim
|e verfasserin
|4 aut
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|a Zhou, Jun
|e verfasserin
|4 aut
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|a Dan, Jiadong
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|a Chen, Zhongxin
|e verfasserin
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|a Chen, Zhi
|e verfasserin
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|a Li, Zejun
|e verfasserin
|4 aut
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|a Lu, Jiong
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|4 aut
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|a Pennycook, Stephen J
|e verfasserin
|4 aut
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|a Feng, Yuan Ping
|e verfasserin
|4 aut
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|a Ding, Jun
|e verfasserin
|4 aut
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|a Loh, Kian Ping
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 40 vom: 05. Okt., Seite e1903779
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:31
|g year:2019
|g number:40
|g day:05
|g month:10
|g pages:e1903779
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|u http://dx.doi.org/10.1002/adma.201903779
|3 Volltext
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