Lasing from Mechanically Exfoliated 2D Homologous Ruddlesden-Popper Perovskite Engineered by Inorganic Layer Thickness

© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 31(2019), 39 vom: 01. Sept., Seite e1903030
1. Verfasser: Liang, Yin (VerfasserIn)
Weitere Verfasser: Shang, Qiuyu, Wei, Qi, Zhao, Liyun, Liu, Zhen, Shi, Jia, Zhong, Yangguang, Chen, Jie, Gao, Yan, Li, Meili, Liu, Xinfeng, Xing, Guichuan, Zhang, Qing
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2019
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D semiconductors Ruddlesden-Popper perovskites carrier dynamics lasing layered materials microlasers
LEADER 01000naa a22002652 4500
001 NLM30018994X
003 DE-627
005 20231225101959.0
007 cr uuu---uuuuu
008 231225s2019 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201903030  |2 doi 
028 5 2 |a pubmed24n1000.xml 
035 |a (DE-627)NLM30018994X 
035 |a (NLM)31408551 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Liang, Yin  |e verfasserin  |4 aut 
245 1 0 |a Lasing from Mechanically Exfoliated 2D Homologous Ruddlesden-Popper Perovskite Engineered by Inorganic Layer Thickness 
264 1 |c 2019 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 30.09.2019 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a 2D Ruddlesden-Popper perovskites (RPPs) have aroused growing attention in light harvesting and emission applications owing to their high environmental stability. Recently, coherent light emission of RPPs was reported, however mostly from inhomologous thin films that involve cascade intercompositional energy transfer. Lasing and fundamental understanding of intrinsic laser dynamics in homologous RPPs free from intercompositional energy transfer is still inadequate. Herein, the lasing and loss mechanisms of homologous 2D (BA)2 (MA)n -1 Pbn I3 n +1 RPP thin flakes mechanically exfoliated from the bulk crystal are reported. Multicolor lasing is achieved from the large-n RPPs (n ≥ 3) in the spectral range of 620-680 nm but not from small-n RPPs (n ≤ 2) even down to 78 K. With decreasing n, the lasing threshold increases significantly and the characteristic temperature decreases as 49, 25, and 20 K for n = 5, 4, and 3, respectively. The n-engineered lasing behaviors are attributed to the stronger Auger recombination and exciton-phonon interaction as a result of the enhanced quantum confinement in the smaller-n perovskites. These results not only advance the fundamental understanding of loss mechanisms in both inhomologous and homologous RPP lasers but also provide insights into developing low-threshold, substrate-free, and multicolor 2D semiconductor microlasers 
650 4 |a Journal Article 
650 4 |a 2D semiconductors 
650 4 |a Ruddlesden-Popper perovskites 
650 4 |a carrier dynamics 
650 4 |a lasing 
650 4 |a layered materials 
650 4 |a microlasers 
700 1 |a Shang, Qiuyu  |e verfasserin  |4 aut 
700 1 |a Wei, Qi  |e verfasserin  |4 aut 
700 1 |a Zhao, Liyun  |e verfasserin  |4 aut 
700 1 |a Liu, Zhen  |e verfasserin  |4 aut 
700 1 |a Shi, Jia  |e verfasserin  |4 aut 
700 1 |a Zhong, Yangguang  |e verfasserin  |4 aut 
700 1 |a Chen, Jie  |e verfasserin  |4 aut 
700 1 |a Gao, Yan  |e verfasserin  |4 aut 
700 1 |a Li, Meili  |e verfasserin  |4 aut 
700 1 |a Liu, Xinfeng  |e verfasserin  |4 aut 
700 1 |a Xing, Guichuan  |e verfasserin  |4 aut 
700 1 |a Zhang, Qing  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 31(2019), 39 vom: 01. Sept., Seite e1903030  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:31  |g year:2019  |g number:39  |g day:01  |g month:09  |g pages:e1903030 
856 4 0 |u http://dx.doi.org/10.1002/adma.201903030  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 31  |j 2019  |e 39  |b 01  |c 09  |h e1903030