Room-Temperature Stimulated Emission and Lasing in Recrystallized Cesium Lead Bromide Perovskite Thin Films

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 31(2019), 39 vom: 11. Sept., Seite e1903717
1. Verfasser:	Pourdavoud, Neda (VerfasserIn)
Weitere Verfasser:	Haeger, Tobias, Mayer, Andre, Cegielski, Piotr Jacek, Giesecke, Anna Lena, Heiderhoff, Ralf, Olthof, Selina, Zaefferer, Stefan, Shutsko, Ivan, Henkel, Andreas, Becker-Koch, David, Stein, Markus, Cehovski, Marko, Charfi, Ouacef, Johannes, Hans-Hermann, Rogalla, Detlef, Lemme, Max Christian, Koch, Martin, Vaynzof, Yana, Meerholz, Klaus, Kowalsky, Wolfgang, Scheer, Hella-Christin, Görrn, Patrick, Riedl, Thomas
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2019
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article cesium lead halide perovskite distributed feedback lasers perovskite vertical cavity surface emitting lasers recrystallization thermal imprint thin films

Beschreibung
Zusammenfassung:	© 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Cesium lead halide perovskites are of interest for light-emitting diodes and lasers. So far, thin-films of CsPbX3 have typically afforded very low photoluminescence quantum yields (PL-QY < 20%) and amplified spontaneous emission (ASE) only at cryogenic temperatures, as defect related nonradiative recombination dominated at room temperature (RT). There is a current belief that, for efficient light emission from lead halide perovskites at RT, the charge carriers/excitons need to be confined on the nanometer scale, like in CsPbX3 nanoparticles (NPs). Here, thin films of cesium lead bromide, which show a high PL-QY of 68% and low-threshold ASE at RT, are presented. As-deposited layers are recrystallized by thermal imprint, which results in continuous films (100% coverage of the substrate), composed of large crystals with micrometer lateral extension. Using these layers, the first cesium lead bromide thin-film distributed feedback and vertical cavity surface emitting lasers with ultralow threshold at RT that do not rely on the use of NPs are demonstrated. It is foreseen that these results will have a broader impact beyond perovskite lasers and will advise a revision of the paradigm that efficient light emission from CsPbX3 perovskites can only be achieved with NPs
Beschreibung:	Date Completed 30.09.2019 Date Revised 01.10.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE
ISSN:	1521-4095
DOI:	10.1002/adma.201903717