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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201903175
|2 doi
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|a pubmed24n0999.xml
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|a (DE-627)NLM299903095
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|a (NLM)31379034
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Qin, Zhengsheng
|e verfasserin
|4 aut
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|a High-Efficiency Single-Component Organic Light-Emitting Transistors
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 11.09.2019
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Construction of high-performance organic light-emitting transistors (OLETs) remains challenging due to the limited desired organic semiconductor materials. Here, two superior high mobility emissive organic semiconductors, 2,6-diphenylanthracene (DPA) and 2,6-di(2-naphthyl) anthracene (dNaAnt), are introduced into the construction of OLETs. By optimizing the device geometry for balanced ambipolar efficient charge transport and using high-quality DPA and dNaAnt single crystals as active layers, high-efficiency single-component OLETs are successfully fabricated, with the demonstration of strong and spatially controlled light emission within both p- and n- conducting channels and output of high external quantum efficiency (EQE). The obtained EQE values in current devices are approaching 1.61% for DPA-OLETs and 1.75% for dNaAnt-based OLETs, respectively, which are the highest EQE values for single-component OLETs in the common device configuration reported so far. Moreover, high brightnesses of 1210 and 3180 cd m-2 with current densities up to 1.3 and 8.4 kA cm-2 are also achieved for DPA- and dNaAnt-based OLETs, respectively. These results demonstrate the great potential applications of high mobility emissive organic semiconductors for next-generation rapid development of high-performance single-component OLETs and their related organic integrated electro-optical devices
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|a Journal Article
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|a high efficiency
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|a high mobility
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|a organic light-emitting transistors
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|a organic semiconductors
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|a single component
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|a strong emission
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|a Gao, Haikuo
|e verfasserin
|4 aut
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|a Liu, Jinyu
|e verfasserin
|4 aut
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|a Zhou, Ke
|e verfasserin
|4 aut
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|a Li, Jie
|e verfasserin
|4 aut
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|a Dang, Yangyang
|e verfasserin
|4 aut
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|a Huang, Le
|e verfasserin
|4 aut
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|a Deng, Huixiong
|e verfasserin
|4 aut
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|a Zhang, Xiaotao
|e verfasserin
|4 aut
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|a Dong, Huanli
|e verfasserin
|4 aut
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|a Hu, Wenping
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 37 vom: 01. Sept., Seite e1903175
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:31
|g year:2019
|g number:37
|g day:01
|g month:09
|g pages:e1903175
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|u http://dx.doi.org/10.1002/adma.201903175
|3 Volltext
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