Spin-Orbit Torque Switching of a Nearly Compensated Ferrimagnet by Topological Surface States

© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 31(2019), 35 vom: 15. Aug., Seite e1901681
1. Verfasser: Wu, Hao (VerfasserIn)
Weitere Verfasser: Xu, Yong, Deng, Peng, Pan, Quanjun, Razavi, Seyed Armin, Wong, Kin, Huang, Li, Dai, Bingqian, Shao, Qiming, Yu, Guoqiang, Han, Xiufeng, Rojas-Sánchez, Juan-Carlos, Mangin, Stéphane, Wang, Kang L
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2019
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article current-induced magnetization switching ferrimagnets spin-orbit torque topological insulators
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520 |a Utilizing spin-orbit torque (SOT) to switch a magnetic moment provides a promising route for low-power-dissipation spintronic devices. Here, the SOT switching of a nearly compensated ferrimagnet Gdx (FeCo)1- x by the topological insulator [Bi2 Se3 and (BiSb)2 Te3 ] is investigated at room temperature. The switching current density of (BiSb)2 Te3 (1.20 × 105 A cm-2 ) is more than one order of magnitude smaller than that in conventional heavy-metal-based structures, which indicates the ultrahigh efficiency of charge-spin conversion (>1) in topological surface states. By tuning the net magnetic moment of Gdx (FeCo)1- x via changing the composition, the SOT efficiency has a significant enhancement (6.5 times) near the magnetic compensation point, and at the same time the switching speed can be as fast as several picoseconds. Combining the topological surface states and the nearly compensated ferrimagnets provides a promising route for practical energy-efficient and high-speed spintronic devices 
650 4 |a Journal Article 
650 4 |a current-induced magnetization switching 
650 4 |a ferrimagnets 
650 4 |a spin-orbit torque 
650 4 |a topological insulators 
700 1 |a Xu, Yong  |e verfasserin  |4 aut 
700 1 |a Deng, Peng  |e verfasserin  |4 aut 
700 1 |a Pan, Quanjun  |e verfasserin  |4 aut 
700 1 |a Razavi, Seyed Armin  |e verfasserin  |4 aut 
700 1 |a Wong, Kin  |e verfasserin  |4 aut 
700 1 |a Huang, Li  |e verfasserin  |4 aut 
700 1 |a Dai, Bingqian  |e verfasserin  |4 aut 
700 1 |a Shao, Qiming  |e verfasserin  |4 aut 
700 1 |a Yu, Guoqiang  |e verfasserin  |4 aut 
700 1 |a Han, Xiufeng  |e verfasserin  |4 aut 
700 1 |a Rojas-Sánchez, Juan-Carlos  |e verfasserin  |4 aut 
700 1 |a Mangin, Stéphane  |e verfasserin  |4 aut 
700 1 |a Wang, Kang L  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 31(2019), 35 vom: 15. Aug., Seite e1901681  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnas 
773 1 8 |g volume:31  |g year:2019  |g number:35  |g day:15  |g month:08  |g pages:e1901681 
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