Role of Surface Reduction in the Formation of Traps in n-Doped II-VI Semiconductor Nanocrystals : How to Charge without Reducing the Surface
The efficiency of nanocrystal (NC)-based devices is often limited by the presence of surface states that lead to localized energy levels in the bandgap. Yet, a complete understanding of the nature of these traps remains challenging. Although theoretical modeling has greatly improved our comprehensio...
| Veröffentlicht in: | Chemistry of materials : a publication of the American Chemical Society. - 1998. - 31(2019), 12 vom: 25. Juni, Seite 4575-4583 |
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| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2019
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| Zugriff auf das übergeordnete Werk: | Chemistry of materials : a publication of the American Chemical Society |
| Schlagworte: | Journal Article |
| Online verfügbar |
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