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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201902543
|2 doi
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|a pubmed25n0994.xml
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|a (DE-627)NLM29846084X
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|a (NLM)31231879
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|a DE-627
|b ger
|c DE-627
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|a eng
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|a Xie, Jiangsheng
|e verfasserin
|4 aut
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|a Perovskite Bifunctional Device with Improved Electroluminescent and Photovoltaic Performance through Interfacial Energy-Band Engineering
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Currently, photovoltaic/electroluminescent (PV/EL) perovskite bifunctional devices (PBDs) exhibit poor performance due to defects and interfacial misalignment of the energy band. Interfacial energy-band engineering between the perovskite and hole-transport layer (HTL) is introduced to reduce energy loss, through adding corrosion-free 3,3'-(2,7-dibromo-9H-fluorene-9,9-diyl) bis(n,n-dimethylpropan-1-amine) (FN-Br) into a HTL free of lithium salt. This strategy can turn the n-type surface of perovskite into p-type and thus correct the misalignment to form a well-defined N-I-P heterojunction. The tailored PBD achieves a high PV efficiency of up to 21.54% (certified 20.24%) and 4.3% EL external quantum efficiency. Free of destructive additives, the unencapsulated devices maintain >92% of their initial PV performance for 500 h at maximum power point under standard air mass 1.5G illumination. This strategy can serve as a general guideline to enhance PV and EL performance of perovskite devices while ensuring excellent stability
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|a Journal Article
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|a corrosion-free additives
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|a halide perovskites
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|a interfacial engineering
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|a photovoltaic/electroluminescent bifunction
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|a Hang, Pengjie
|e verfasserin
|4 aut
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|a Wang, Han
|e verfasserin
|4 aut
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|a Zhao, Shenghe
|e verfasserin
|4 aut
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|a Li, Ge
|e verfasserin
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|a Fang, Yanjun
|e verfasserin
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|a Liu, Feng
|e verfasserin
|4 aut
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|a Guo, Xinlu
|e verfasserin
|4 aut
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|a Zhu, Hepeng
|e verfasserin
|4 aut
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|a Lu, Xinhui
|e verfasserin
|4 aut
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|a Yu, Xuegong
|e verfasserin
|4 aut
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|a Chan, Christopher C S
|e verfasserin
|4 aut
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|a Wong, Kam Sing
|e verfasserin
|4 aut
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|a Yang, Deren
|e verfasserin
|4 aut
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|a Xu, Jianbin
|e verfasserin
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|a Yan, Keyou
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 33 vom: 27. Aug., Seite e1902543
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:31
|g year:2019
|g number:33
|g day:27
|g month:08
|g pages:e1902543
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|u http://dx.doi.org/10.1002/adma.201902543
|3 Volltext
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