Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100 °C Using Sequential Surface Reactions
Low energy electrons may provide mechanisms to enhance thin film growth at low temperatures. As a proof of concept, this work demonstrated the deposition of gallium nitride (GaN) films over areas of ∼5 cm2 at room temperature and 100 °C using electrons with a low energy of 50 eV from an electron flo...
Ausführliche Beschreibung
Bibliographische Detailangaben
| Veröffentlicht in: | Chemistry of materials : a publication of the American Chemical Society. - 1998. - 28(2016) vom: 15.
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| 1. Verfasser: |
Sprenger, Jaclyn K
(VerfasserIn) |
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| Weitere Verfasser: |
Cavanagh, Andrew S,
Sun, Huaxing,
Wahl, Kathryn J,
Roshko, Alexana,
George, Steven M |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2016
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| Zugriff auf das übergeordnete Werk: | Chemistry of materials : a publication of the American Chemical Society
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| Schlagworte: | Journal Article |
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