Phosphorus-Rich Colloidal Cobalt Diphosphide (CoP2 ) Nanocrystals for Electrochemical and Photoelectrochemical Hydrogen Evolution

© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 31(2019), 24 vom: 08. Juni, Seite e1900813
1. Verfasser: Li, Hui (VerfasserIn)
Weitere Verfasser: Wen, Peng, Itanze, Dominique S, Kim, Michael W, Adhikari, Shiba, Lu, Chang, Jiang, Lin, Qiu, Yejun, Geyer, Scott M
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2019
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Retracted Publication cobalt diphosphide density functional theory in situ XAS metal-insulator-semiconductor photoelectrochemical water splitting
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520 |a Developing earth-abundant and efficient electrocatalysts for photoelectrochemical water splitting is critical to realizing a high-performance solar-to-hydrogen energy conversion process. Herein, phosphorus-rich colloidal cobalt diphosphide nanocrystals (CoP2 NCs) are synthesized via hot injection. The CoP2 NCs show a Pt-like hydrogen evolution reaction (HER) electrocatalytic activity in acidic solution with a small overpotential of 39 mV to achieve -10 mA cm-2 and a very low Tafel slope of 32 mV dec-1 . Density functional theory (DFT) calculations reveal that the high P content both physically separates Co atoms to prevent H from over binding to multiple Co atoms, while simultaneously stabilizing H adsorbed to single Co atoms. The catalytic performance of the CoP2 NCs is further demonstrated in a metal-insulator-semiconductor photoelectrochemical device consisting of bottom p-Si light absorber, atomic layer deposition Al-ZnO passivation layers, and the CoP2 cocatalyst. The p-Si/AZO/TiO2 /CoP2 photocathode shows a photocurrent density of -16.7 mA cm-2 at 0 V versus reversible hydrogen electrode (RHE) and an output photovoltage of 0.54 V. The high performance and stability are attributed to the junction between p-Si and AZO, the corrosion-resistance of the pinhole-free TiO2 protective layer, and the fast HER kinetics of the CoP2 NCs 
650 4 |a Journal Article 
650 4 |a Retracted Publication 
650 4 |a cobalt diphosphide 
650 4 |a density functional theory 
650 4 |a in situ XAS 
650 4 |a metal-insulator-semiconductor 
650 4 |a photoelectrochemical water splitting 
700 1 |a Wen, Peng  |e verfasserin  |4 aut 
700 1 |a Itanze, Dominique S  |e verfasserin  |4 aut 
700 1 |a Kim, Michael W  |e verfasserin  |4 aut 
700 1 |a Adhikari, Shiba  |e verfasserin  |4 aut 
700 1 |a Lu, Chang  |e verfasserin  |4 aut 
700 1 |a Jiang, Lin  |e verfasserin  |4 aut 
700 1 |a Qiu, Yejun  |e verfasserin  |4 aut 
700 1 |a Geyer, Scott M  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 31(2019), 24 vom: 08. Juni, Seite e1900813  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:31  |g year:2019  |g number:24  |g day:08  |g month:06  |g pages:e1900813 
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