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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201900813
|2 doi
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|a pubmed24n0989.xml
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|a (DE-627)NLM296779091
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|a (NLM)31058405
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Li, Hui
|e verfasserin
|4 aut
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|a Phosphorus-Rich Colloidal Cobalt Diphosphide (CoP2 ) Nanocrystals for Electrochemical and Photoelectrochemical Hydrogen Evolution
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 01.06.2023
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|a published: Print-Electronic
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|a RetractionIn: Adv Mater. 2023 Jun;35(22):e2302628. - PMID 37259702
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Developing earth-abundant and efficient electrocatalysts for photoelectrochemical water splitting is critical to realizing a high-performance solar-to-hydrogen energy conversion process. Herein, phosphorus-rich colloidal cobalt diphosphide nanocrystals (CoP2 NCs) are synthesized via hot injection. The CoP2 NCs show a Pt-like hydrogen evolution reaction (HER) electrocatalytic activity in acidic solution with a small overpotential of 39 mV to achieve -10 mA cm-2 and a very low Tafel slope of 32 mV dec-1 . Density functional theory (DFT) calculations reveal that the high P content both physically separates Co atoms to prevent H from over binding to multiple Co atoms, while simultaneously stabilizing H adsorbed to single Co atoms. The catalytic performance of the CoP2 NCs is further demonstrated in a metal-insulator-semiconductor photoelectrochemical device consisting of bottom p-Si light absorber, atomic layer deposition Al-ZnO passivation layers, and the CoP2 cocatalyst. The p-Si/AZO/TiO2 /CoP2 photocathode shows a photocurrent density of -16.7 mA cm-2 at 0 V versus reversible hydrogen electrode (RHE) and an output photovoltage of 0.54 V. The high performance and stability are attributed to the junction between p-Si and AZO, the corrosion-resistance of the pinhole-free TiO2 protective layer, and the fast HER kinetics of the CoP2 NCs
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|a Journal Article
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|a Retracted Publication
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|a cobalt diphosphide
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|a density functional theory
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|a in situ XAS
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|a metal-insulator-semiconductor
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|a photoelectrochemical water splitting
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|a Wen, Peng
|e verfasserin
|4 aut
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|a Itanze, Dominique S
|e verfasserin
|4 aut
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|a Kim, Michael W
|e verfasserin
|4 aut
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|a Adhikari, Shiba
|e verfasserin
|4 aut
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|a Lu, Chang
|e verfasserin
|4 aut
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|a Jiang, Lin
|e verfasserin
|4 aut
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|a Qiu, Yejun
|e verfasserin
|4 aut
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|a Geyer, Scott M
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 24 vom: 08. Juni, Seite e1900813
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:31
|g year:2019
|g number:24
|g day:08
|g month:06
|g pages:e1900813
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|u http://dx.doi.org/10.1002/adma.201900813
|3 Volltext
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