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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201901185
|2 doi
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|a pubmed24n0987.xml
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|a (DE-627)NLM296182540
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|a (NLM)30997712
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Wong, Ping Kwan Johnny
|e verfasserin
|4 aut
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|a Evidence of Spin Frustration in a Vanadium Diselenide Monolayer Magnet
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Monolayer VSe2 , featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic 2D transition-metal dichalcogenides (2D-TMDs). Herein, by means of in situ microscopy and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, direct spectroscopic signatures are established, that identify the metallic 1T-phase and vanadium 3d1 electronic configuration in monolayer VSe2 grown on graphite by molecular-beam epitaxy. Element-specific X-ray magnetic circular dichroism, complemented with magnetic susceptibility measurements, further reveals monolayer VSe2 as a frustrated magnet, with its spins exhibiting subtle correlations, albeit in the absence of a long-range magnetic order down to 2 K and up to a 7 T magnetic field. This observation is attributed to the relative stability of the ferromagnetic and antiferromagnetic ground states, arising from its atomic-scale structural features, such as rotational disorders and edges. The results of this study extend the current understanding of metallic 2D-TMDs in the search for exotic low-dimensional quantum phenomena, and stimulate further theoretical and experimental studies on van der Waals monolayer magnets
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|a Journal Article
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|a 2D materials
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|a monolayer magnet
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|a spin frustration
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|a van der Waals epitaxy
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|a vanadium diselenide
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|a Zhang, Wen
|e verfasserin
|4 aut
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|a Bussolotti, Fabio
|e verfasserin
|4 aut
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|a Yin, Xinmao
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|4 aut
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|a Herng, Tun Seng
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|a Zhang, Lei
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|4 aut
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|a Huang, Yu Li
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|4 aut
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|a Vinai, Giovanni
|e verfasserin
|4 aut
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|a Krishnamurthi, Sridevi
|e verfasserin
|4 aut
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|a Bukhvalov, Danil W
|e verfasserin
|4 aut
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|a Zheng, Yu Jie
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|4 aut
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|a Chua, Rebekah
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|4 aut
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|a N'Diaye, Alpha T
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|4 aut
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|a Morton, Simon A
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|4 aut
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|a Yang, Chao-Yao
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|4 aut
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|a Ou Yang, Kui-Hon
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|4 aut
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|a Torelli, Piero
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|4 aut
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|a Chen, Wei
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|4 aut
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|a Goh, Kuan Eng Johnson
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|4 aut
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|a Ding, Jun
|e verfasserin
|4 aut
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|a Lin, Minn-Tsong
|e verfasserin
|4 aut
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|a Brocks, Geert
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|4 aut
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|a de Jong, Michel P
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|4 aut
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|a Castro Neto, Antonio H
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|4 aut
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|a Wee, Andrew Thye Shen
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 23 vom: 16. Juni, Seite e1901185
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:31
|g year:2019
|g number:23
|g day:16
|g month:06
|g pages:e1901185
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|u http://dx.doi.org/10.1002/adma.201901185
|3 Volltext
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|d 31
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