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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201901174
|2 doi
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|a pubmed25n0987.xml
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|a (DE-627)NLM296144584
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|a (NLM)30993780
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|a DE-627
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|a eng
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|a Yan, Haijing
|e verfasserin
|4 aut
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|a Anion-Modulated HER and OER Activities of 3D Ni-V-Based Interstitial Compound Heterojunctions for High-Efficiency and Stable Overall Water Splitting
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Overall water splitting driven by a low voltage is crucial for practical H2 evolution, but it is challenging. Herein, anion-modulation of 3D Ni-V-based transition metal interstitial compound (TMIC) heterojunctions supported on nickel foam (Ni3 N-VN/NF and Ni2 P-VP2 /NF) as coupled hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) catalysts for efficient overall water splitting is demonstrated. The heterointerface in Ni3 N-VN has a suitable H* absorption energy, being favorable for enhancing HER activity with onset overpotential (ηonset ) of zero and Tafel slope of 37 mV dec-1 in 1 m KOH (close to that of Pt/C/NF). For the OER, the synergy of Ni2 P-VP2 with oxide species can give enhanced activity with ηonset of 220 mV and Tafel slope of 49 mV dec-1 . The good activity is ascribed to heterointerface for activating the intermediates, good conductivity of TMICs for electron-transfer, and porous structure facilitation of mass-transport. Additionally, the minimal mutual influence of Ni3 N-VN/NF and Ni2 P-VP2 /NF allows easy coupling for efficient overall water splitting with a low driving voltage (≥1.43 V), a voltage of 1.51 V at 10 mA cm-2 , and remarkable durability for 100 h. It can be driven by a solar cell (1.5 V), indicating its potential to store intermittent energy
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|a Journal Article
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|a heterojunctions
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|a metal interstitial compounds
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|a nitrides
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|a overall water splitting
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|a phosphides
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|a Xie, Ying
|e verfasserin
|4 aut
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|a Wu, Aiping
|e verfasserin
|4 aut
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|a Cai, Zhicheng
|e verfasserin
|4 aut
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|a Wang, Lei
|e verfasserin
|4 aut
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|a Tian, Chungui
|e verfasserin
|4 aut
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|a Zhang, Xiaomeng
|e verfasserin
|4 aut
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|a Fu, Honggang
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 23 vom: 30. Juni, Seite e1901174
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:31
|g year:2019
|g number:23
|g day:30
|g month:06
|g pages:e1901174
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|u http://dx.doi.org/10.1002/adma.201901174
|3 Volltext
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