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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201900776
|2 doi
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|a pubmed24n0985.xml
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|a (DE-627)NLM295794461
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|a (NLM)30957913
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|a DE-627
|b ger
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|a eng
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|a Xie, Qidong
|e verfasserin
|4 aut
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|a Giant Enhancements of Perpendicular Magnetic Anisotropy and Spin-Orbit Torque by a MoS2 Layer
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a 2D transition metal dichalcogenides have attracted much attention in the field of spintronics due to their rich spin-dependent properties. The promise of highly compact and low-energy-consumption spin-orbit torque (SOT) devices motivates the search for structures and materials that can satisfy the requirements of giant perpendicular magnetic anisotropy (PMA) and large SOT simultaneously in SOT-based magnetic memory. Here, it is demonstrated that PMA and SOT in a heavy metal/transition metal ferromagnet structure, Pt/[Co/Ni]2 , can be greatly enhanced by introducing a molybdenum disulfide (MoS2 ) underlayer. According to first-principles calculation and X-ray absorption spectroscopy (XAS), the enhancement of the PMA is ascribed to the modification of the orbital hybridization at the interface of Pt/Co due to MoS2 . The enhancement of SOT by the role played by MoS2 is explained, which is strongly supported by the identical behavior of SOT and PMA as a function of Pt thickness. This work provides new possibilities to integrate 2D materials into promising spintronics devices
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|a Journal Article
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|a 2D materials
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|a orbital hybridization
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|a perpendicular magnetic anisotropy
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|a spin-orbit torque
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|a Lin, Weinan
|e verfasserin
|4 aut
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|a Yang, Baishun
|e verfasserin
|4 aut
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|a Shu, Xinyu
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|4 aut
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|a Chen, Shaohai
|e verfasserin
|4 aut
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|a Liu, Liang
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|a Yu, Xiaojiang
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|a Breese, Mark B H
|e verfasserin
|4 aut
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|a Zhou, Tiejun
|e verfasserin
|4 aut
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|a Yang, Ming
|e verfasserin
|4 aut
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|a Zhang, Zheng
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|4 aut
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|a Wang, Shijie
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|a Yang, Hongxin
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|a Chai, Jianwei
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|a Han, Xiufeng
|e verfasserin
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|a Chen, Jingsheng
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 21 vom: 23. Mai, Seite e1900776
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:31
|g year:2019
|g number:21
|g day:23
|g month:05
|g pages:e1900776
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|u http://dx.doi.org/10.1002/adma.201900776
|3 Volltext
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