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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201807810
|2 doi
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|a pubmed24n0984.xml
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|a eng
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|a Montes, Enrique
|e verfasserin
|4 aut
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|a High-Performance Field-Effect Transistors Based on αP and βP
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The electronic properties of black and blue phosphorus nanoribbons are investigated, which enables the proposal of junction-free field-effect transistors that comprise metallic armchair nanoribbons as electrodes and, in between, a semiconducting zigzag nanoribbon as channel material (cut out of a single sheet of monolayer black or blue phosphorus). Using first-principles calculations and the nonequilibrium Green's function method, the proposed field-effect transistors are characterized. It is found that it is possible to achieve outstanding performance, with high on/off ratios, low subthreshold swings, and high transconductances
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|a Journal Article
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|a black phosphorus
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|a blue phosphorus
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|a field-effect transistors
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|a nanoribbons
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|a transport
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1 |
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|a Schwingenschlögl, Udo
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 18 vom: 23. Mai, Seite e1807810
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|x 1521-4095
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|g volume:31
|g year:2019
|g number:18
|g day:23
|g month:05
|g pages:e1807810
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|u http://dx.doi.org/10.1002/adma.201807810
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