Deducing density and strength of nanocrystalline Ta and diamond under extreme conditions from X-ray diffraction

In situ X-ray diffraction with advanced X-ray sources offers unique opportunities for investigating materials properties under extreme conditions such as shock-wave loading. Here, Singh's theory for deducing high-pressure density and strength from two-dimensional (2D) diffraction patterns is ri...

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Veröffentlicht in:Journal of synchrotron radiation. - 1994. - 26(2019), Pt 2 vom: 01. März, Seite 413-421
1. Verfasser: Zhang, Y Y (VerfasserIn)
Weitere Verfasser: Tang, M X, Cai, Y, E, J C, Luo, S N
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2019
Zugriff auf das übergeordnete Werk:Journal of synchrotron radiation
Schlagworte:Journal Article X-ray diffraction simulation diamond diamond anvil cell compression high-pressure density and strength molecular dynamics nanocrystalline Ta shock compression
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520 |a In situ X-ray diffraction with advanced X-ray sources offers unique opportunities for investigating materials properties under extreme conditions such as shock-wave loading. Here, Singh's theory for deducing high-pressure density and strength from two-dimensional (2D) diffraction patterns is rigorously examined with large-scale molecular dynamics simulations of isothermal compression and shock-wave compression. Two representative solids are explored: nanocrystalline Ta and diamond. Analysis of simulated 2D X-ray diffraction patterns is compared against direct molecular dynamics simulation results. Singh's method is highly accurate for density measurement (within 1%) and reasonable for strength measurement (within 10%), and can be used for such measurements on nanocrystalline and polycrystalline solids under extreme conditions (e.g. in the megabar regime) 
650 4 |a Journal Article 
650 4 |a X-ray diffraction simulation 
650 4 |a diamond 
650 4 |a diamond anvil cell compression 
650 4 |a high-pressure density and strength 
650 4 |a molecular dynamics 
650 4 |a nanocrystalline Ta 
650 4 |a shock compression 
700 1 |a Tang, M X  |e verfasserin  |4 aut 
700 1 |a Cai, Y  |e verfasserin  |4 aut 
700 1 |a E, J C  |e verfasserin  |4 aut 
700 1 |a Luo, S N  |e verfasserin  |4 aut 
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