Style de citation APA

Kong, T., Stolze, K., Timmons, E. I., Tao, J., Ni, D., Guo, S., . . . Cava, R. J. (2019). VI3 -a New Layered Ferromagnetic Semiconductor. Advanced materials (Deerfield Beach, Fla.), 31(17), . https://doi.org/10.1002/adma.201808074

Style de citation Chicago

Kong, Tai, Karoline Stolze, Erik I. Timmons, Jing Tao, Danrui Ni, Shu Guo, Zoë Yang, Ruslan Prozorov, et Robert J. Cava. "VI3 -a New Layered Ferromagnetic Semiconductor." Advanced Materials (Deerfield Beach, Fla.) 31, no. 17 (2019). https://dx.doi.org/10.1002/adma.201808074.

Style de citation MLA

Kong, Tai, et al. "VI3 -a New Layered Ferromagnetic Semiconductor." Advanced Materials (Deerfield Beach, Fla.), vol. 31, no. 17, 2019.