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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201807435
|2 doi
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|a pubmed24n0978.xml
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|a (DE-627)NLM293666539
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|a (NLM)30740780
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Tan, Furui
|e verfasserin
|4 aut
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|a In Situ Back-Contact Passivation Improves Photovoltage and Fill Factor in Perovskite Solar Cells
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 05.04.2019
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Organic-inorganic hybrid perovskite solar cells (PSCs) have seen a rapid rise in power conversion efficiencies in recent years; however, they still suffer from interfacial recombination and charge extraction losses at interfaces between the perovskite absorber and the charge-transport layers. Here, in situ back-contact passivation (BCP) that reduces interfacial and extraction losses between the perovskite absorber and the hole transport layer (HTL) is reported. A thin layer of nondoped semiconducting polymer at the perovskite/HTL interface is introduced and it is shown that the use of the semiconductor polymer permits-in contrast with previously studied insulator-based passivants-the use of a relatively thick passivating layer. It is shown that a flat-band alignment between the perovskite and polymer passivation layers achieves a high photovoltage and fill factor: the resultant BCP enables a photovoltage of 1.15 V and a fill factor of 83% in 1.53 eV bandgap PSCs, leading to an efficiency of 21.6% in planar solar cells
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|a Journal Article
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|a band alignment
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|a passivation
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|a perovskite solar cells
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|a semiconducting polymers
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|a Tan, Hairen
|e verfasserin
|4 aut
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1 |
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|a Saidaminov, Makhsud I
|e verfasserin
|4 aut
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1 |
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|a Wei, Mingyang
|e verfasserin
|4 aut
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1 |
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|a Liu, Mengxia
|e verfasserin
|4 aut
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1 |
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|a Mei, Anyi
|e verfasserin
|4 aut
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1 |
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|a Li, Peicheng
|e verfasserin
|4 aut
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1 |
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|a Zhang, Bowen
|e verfasserin
|4 aut
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1 |
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|a Tan, Chih-Shan
|e verfasserin
|4 aut
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1 |
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|a Gong, Xiwen
|e verfasserin
|4 aut
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1 |
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|a Zhao, Yongbiao
|e verfasserin
|4 aut
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1 |
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|a Kirmani, Ahmad R
|e verfasserin
|4 aut
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1 |
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|a Huang, Ziru
|e verfasserin
|4 aut
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1 |
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|a Fan, James Z
|e verfasserin
|4 aut
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1 |
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|a Quintero-Bermudez, Rafael
|e verfasserin
|4 aut
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|a Kim, Junghwan
|e verfasserin
|4 aut
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|a Zhao, Yicheng
|e verfasserin
|4 aut
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|a Voznyy, Oleksandr
|e verfasserin
|4 aut
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1 |
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|a Gao, Yueyue
|e verfasserin
|4 aut
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|a Zhang, Feng
|e verfasserin
|4 aut
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1 |
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|a Richter, Lee J
|e verfasserin
|4 aut
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|a Lu, Zheng-Hong
|e verfasserin
|4 aut
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|a Zhang, Weifeng
|e verfasserin
|4 aut
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| 700 |
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|a Sargent, Edward H
|e verfasserin
|4 aut
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| 773 |
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8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 14 vom: 20. Apr., Seite e1807435
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:31
|g year:2019
|g number:14
|g day:20
|g month:04
|g pages:e1807435
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| 856 |
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|u http://dx.doi.org/10.1002/adma.201807435
|3 Volltext
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|a GBV_ILN_350
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|d 31
|j 2019
|e 14
|b 20
|c 04
|h e1807435
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