Recent Developments in Controlled Vapor-Phase Growth of 2D Group 6 Transition Metal Dichalcogenides
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 31(2019), 20 vom: 30. Mai, Seite e1804939 |
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| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2019
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| Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
| Schlagworte: | Journal Article Review 2D transition metal dichalcogenides (2D TMDs) growth promoter/assistant heterostructure metal-organic chemical vapor deposition (MOCVD) vapor-phase growth |
| Zusammenfassung: | © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. An overview of recent developments in controlled vapor-phase growth of 2D transition metal dichalcogenide (2D TMD) films is presented. Investigations of thin-film formation mechanisms and strategies for realizing 2D TMD films with less-defective large domains are of central importance because single-crystal-like 2D TMDs exhibit the most beneficial electronic and optoelectronic properties. The focus is on the role of the various growth parameters, including strategies for efficiently delivering the precursors, the selection and preparation of the substrate surface as a growth assistant, and the introduction of growth promoters (e.g., organic molecules and alkali metal halides) to facilitate the layered growth of (Mo, W)(S, Se, Te)2 atomic crystals on inert substrates. Critical factors governing the thermodynamic and kinetic factors related to chemical reaction pathways and the growth mechanism are reviewed. With modification of classical nucleation theory, strategies for designing and growing various vertical/lateral TMD-based heterostructures are discussed. Then, several pioneering techniques for facile observation of structural defects in TMDs, which substantially degrade the properties of macroscale TMDs, are introduced. Technical challenges to be overcome and future research directions in the vapor-phase growth of 2D TMDs for heterojunction devices are discussed in light of recent advances in the field |
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| Beschreibung: | Date Revised 01.10.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.201804939 |