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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201805944
|2 doi
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|a pubmed25n0977.xml
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|a (DE-627)NLM29324832X
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|a (NLM)30697836
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Tu, Bao
|e verfasserin
|4 aut
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|a Novel Molecular Doping Mechanism for n-Doping of SnO2 via Triphenylphosphine Oxide and Its Effect on Perovskite Solar Cells
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 12.04.2019
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Molecular doping of inorganic semiconductors is a rising topic in the field of organic/inorganic hybrid electronics. However, it is difficult to find dopant molecules which simultaneously exhibit strong reducibility and stability in ambient atmosphere, which are needed for n-type doping of oxide semiconductors. Herein, successful n-type doping of SnO2 is demonstrated by a simple, air-robust, and cost-effective triphenylphosphine oxide molecule. Strikingly, it is discovered that electrons are transferred from the R3P+ O- σ-bond to the peripheral tin atoms other than the directly interacted ones at the surface. That means those electrons are delocalized. The course is verified by multi-photophysical characterizations. This doping effect accounts for the enhancement of conductivity and the decline of work function of SnO2 , which enlarges the built-in field from 0.01 to 0.07 eV and decreases the energy barrier from 0.55 to 0.39 eV at the SnO2 /perovskite interface enabling an increase in the conversion efficiency of perovskite solar cells from 19.01% to 20.69%
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|a Journal Article
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|a SnO2
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|a delocalized electrons
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|a molecular doping
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|a n-type
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|a perovskite solar cells
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|a Shao, Yangfan
|e verfasserin
|4 aut
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1 |
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|a Chen, Wei
|e verfasserin
|4 aut
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1 |
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|a Wu, Yinghui
|e verfasserin
|4 aut
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1 |
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|a Li, Xin
|e verfasserin
|4 aut
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1 |
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|a He, Yanling
|e verfasserin
|4 aut
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1 |
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|a Li, Jiaxing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Fangzhou
|e verfasserin
|4 aut
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| 700 |
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|a Zhang, Zheng
|e verfasserin
|4 aut
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1 |
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|a Lin, Yi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lan, Xiaoqi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xu, Leiming
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shi, Xingqiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ng, Alan Man Ching
|e verfasserin
|4 aut
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| 700 |
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|a Li, Haifeng
|e verfasserin
|4 aut
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|a Chung, Lung Wa
|e verfasserin
|4 aut
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|a Djurišić, Aleksandra B
|e verfasserin
|4 aut
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| 700 |
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|a He, Zhubing
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 15 vom: 15. Apr., Seite e1805944
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:31
|g year:2019
|g number:15
|g day:15
|g month:04
|g pages:e1805944
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|u http://dx.doi.org/10.1002/adma.201805944
|3 Volltext
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