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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201805778
|2 doi
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|a pubmed24n0977.xml
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|a (DE-627)NLM293153094
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|a (NLM)30687974
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Fan, Mengmeng
|e verfasserin
|4 aut
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|a Doping Nanoscale Graphene Domains Improves Magnetism in Hexagonal Boron Nitride
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 19.03.2019
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Carbon doping can induce unique and interesting physical properties in hexagonal boron nitride (h-BN). Typically, isolated carbon atoms are doped into h-BN. Herein, however, the insertion of nanometer-scale graphene quantum dots (GQDs) is demonstrated as whole units into h-BN sheets to form h-CBN. The h-CBN is prepared by using GQDs as seed nucleations for the epitaxial growth of h-BN along the edges of GQDs without the assistance of metal catalysts. The resulting h-CBN sheets possess a uniform distrubution of GQDs in plane and a high porosity macroscopically. The h-CBN tends to form in small triangular sheets which suggests an enhanced crystallinity compared to the h-BN synthesized under the same conditions without GQDs. An enhanced ferromagnetism in the h-CBN emerges due to the spin polarization and charge asymmetry resulting from the high density of CN and CB bonds at the boundary between the GQDs and the h-BN domains. The saturation magnetic moment of h-CBN reaches 0.033 emu g-1 at 300 K, which is three times that of as-prepared single carbon-doped h-BN
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|a Journal Article
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|a bandgap
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|a graphene quantum dots
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|a heterostructures
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|a hexagonal boron nitride
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|a magnetism
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|a Wu, Jingjie
|e verfasserin
|4 aut
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|a Yuan, Jiangtan
|e verfasserin
|4 aut
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|a Deng, Liangzi
|e verfasserin
|4 aut
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|a Zhong, Ning
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|4 aut
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|a He, Liang
|e verfasserin
|4 aut
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|a Cui, Jiewu
|e verfasserin
|4 aut
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|a Wang, Zixing
|e verfasserin
|4 aut
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|a Behera, Sushant Kumar
|e verfasserin
|4 aut
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|a Zhang, Chenhao
|e verfasserin
|4 aut
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|a Lai, Jiawei
|e verfasserin
|4 aut
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|a Jawdat, BenMaan I
|e verfasserin
|4 aut
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|a Vajtai, Robert
|e verfasserin
|4 aut
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|a Deb, Pritam
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|4 aut
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|a Huang, Yang
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|4 aut
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|a Qian, Jieshu
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|4 aut
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|a Yang, Jiazhi
|e verfasserin
|4 aut
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|a Tour, James M
|e verfasserin
|4 aut
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|a Lou, Jun
|e verfasserin
|4 aut
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|a Chu, Ching-Wu
|e verfasserin
|4 aut
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|a Sun, Dongping
|e verfasserin
|4 aut
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|a Ajayan, Pulickel M
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 12 vom: 12. März, Seite e1805778
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:31
|g year:2019
|g number:12
|g day:12
|g month:03
|g pages:e1805778
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|u http://dx.doi.org/10.1002/adma.201805778
|3 Volltext
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