Doping Nanoscale Graphene Domains Improves Magnetism in Hexagonal Boron Nitride

© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 31(2019), 12 vom: 12. März, Seite e1805778
1. Verfasser: Fan, Mengmeng (VerfasserIn)
Weitere Verfasser: Wu, Jingjie, Yuan, Jiangtan, Deng, Liangzi, Zhong, Ning, He, Liang, Cui, Jiewu, Wang, Zixing, Behera, Sushant Kumar, Zhang, Chenhao, Lai, Jiawei, Jawdat, BenMaan I, Vajtai, Robert, Deb, Pritam, Huang, Yang, Qian, Jieshu, Yang, Jiazhi, Tour, James M, Lou, Jun, Chu, Ching-Wu, Sun, Dongping, Ajayan, Pulickel M
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2019
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article bandgap graphene quantum dots heterostructures hexagonal boron nitride magnetism
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520 |a Carbon doping can induce unique and interesting physical properties in hexagonal boron nitride (h-BN). Typically, isolated carbon atoms are doped into h-BN. Herein, however, the insertion of nanometer-scale graphene quantum dots (GQDs) is demonstrated as whole units into h-BN sheets to form h-CBN. The h-CBN is prepared by using GQDs as seed nucleations for the epitaxial growth of h-BN along the edges of GQDs without the assistance of metal catalysts. The resulting h-CBN sheets possess a uniform distrubution of GQDs in plane and a high porosity macroscopically. The h-CBN tends to form in small triangular sheets which suggests an enhanced crystallinity compared to the h-BN synthesized under the same conditions without GQDs. An enhanced ferromagnetism in the h-CBN emerges due to the spin polarization and charge asymmetry resulting from the high density of CN and CB bonds at the boundary between the GQDs and the h-BN domains. The saturation magnetic moment of h-CBN reaches 0.033 emu g-1 at 300 K, which is three times that of as-prepared single carbon-doped h-BN 
650 4 |a Journal Article 
650 4 |a bandgap 
650 4 |a graphene quantum dots 
650 4 |a heterostructures 
650 4 |a hexagonal boron nitride 
650 4 |a magnetism 
700 1 |a Wu, Jingjie  |e verfasserin  |4 aut 
700 1 |a Yuan, Jiangtan  |e verfasserin  |4 aut 
700 1 |a Deng, Liangzi  |e verfasserin  |4 aut 
700 1 |a Zhong, Ning  |e verfasserin  |4 aut 
700 1 |a He, Liang  |e verfasserin  |4 aut 
700 1 |a Cui, Jiewu  |e verfasserin  |4 aut 
700 1 |a Wang, Zixing  |e verfasserin  |4 aut 
700 1 |a Behera, Sushant Kumar  |e verfasserin  |4 aut 
700 1 |a Zhang, Chenhao  |e verfasserin  |4 aut 
700 1 |a Lai, Jiawei  |e verfasserin  |4 aut 
700 1 |a Jawdat, BenMaan I  |e verfasserin  |4 aut 
700 1 |a Vajtai, Robert  |e verfasserin  |4 aut 
700 1 |a Deb, Pritam  |e verfasserin  |4 aut 
700 1 |a Huang, Yang  |e verfasserin  |4 aut 
700 1 |a Qian, Jieshu  |e verfasserin  |4 aut 
700 1 |a Yang, Jiazhi  |e verfasserin  |4 aut 
700 1 |a Tour, James M  |e verfasserin  |4 aut 
700 1 |a Lou, Jun  |e verfasserin  |4 aut 
700 1 |a Chu, Ching-Wu  |e verfasserin  |4 aut 
700 1 |a Sun, Dongping  |e verfasserin  |4 aut 
700 1 |a Ajayan, Pulickel M  |e verfasserin  |4 aut 
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