Two-Terminal Multibit Optical Memory via van der Waals Heterostructure

Two-Terminal Multibit Optical Memory via van der Waals Heterostructure

© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 31(2019), 7 vom: 05. Feb., Seite e1807075
1. Verfasser: Tran, Minh Dao (VerfasserIn)
Weitere Verfasser: Kim, Hyun, Kim, Jun Suk, Doan, Manh Ha, Chau, Tuan Khanh, Vu, Quoc An, Kim, Ji-Hee, Lee, Young Hee
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2019
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article hysteresis optical memory two-terminal memory van der Waals heterostructures
Beschreibung
Zusammenfassung:© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
2D van der Waals (vdWs) heterostructures exhibit intriguing optoelectronic properties in photodetectors, solar cells, and light-emitting diodes. In addition, these materials have the potential to be further extended to optical memories with promising broadband applications for image sensing, logic gates, and synaptic devices for neuromorphic computing. In particular, high programming voltage, high off-power consumption, and circuital complexity in integration are primary concerns in the development of three-terminal optical memory devices. This study describes a multilevel nonvolatile optical memory device with a two-terminal floating-gate field-effect transistor with a MoS2 /hexagonal boron nitride/graphene heterostructure. The device exhibits an extremely low off-current of ≈10-14 A and high optical switching on/off current ratio of over ≈106 , allowing 18 distinct current levels corresponding to more than four-bit information storage. Furthermore, it demonstrates an extended endurance of over ≈104 program-erase cycles and a long retention time exceeding 3.6 × 104 s with a low programming voltage of -10 V. This device paves the way for miniaturization and high-density integration of future optical memories with vdWs heterostructures
Beschreibung:Date Completed 13.02.2019
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201807075