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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201805860
|2 doi
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|a pubmed24n0972.xml
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|a (DE-627)NLM291790119
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|a (NLM)30549104
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Lee, Byung Chul
|e verfasserin
|4 aut
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|a Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 11.02.2019
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Charge carrier transport in multilayer van der Waals (vdW) materials, which comprise multiple conducting layers, is well described using Thomas-Fermi charge screening (λTF ) and interlayer resistance (Rint ). When both effects occur in carrier transport, a channel centroid migrates along the c-axis according to a vertical electrostatic force, causing redistribution of the conduction centroid in a multilayer system, unlike a conventional bulk material. Thus far, numerous unique properties of vdW materials are discovered, but direct evidence for distinctive charge transport behavior in 2D layered materials is not demonstrated. Herein, the distinctive electron conduction features are reported in a multilayer rhenium disulfide (ReS2 ), which provides decoupled vdW interaction between adjacent layers and much high interlayer resistivity in comparison with other transition-metal dichalcogenides materials. The existence of two plateaus in its transconductance curve clearly reveals the relocation of conduction paths with respect to the top and bottom surfaces, which is rationalized by a theoretical resistor network model by accounting of λTF and Rint coupling. The effective tunneling distance probed via low-frequency noise spectroscopy further supports the shift of electron conduction channel along the thickness of ReS2
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|a Journal Article
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|a Coulomb screening
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|a anisotropy transport
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|a charge conduction mechanism
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|a multilayer
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|a rhenium disulfide
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|a Na, Junhong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Choi, Jun Hee
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ji, Hyunjin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Gyu-Tae
|e verfasserin
|4 aut
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| 700 |
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|a Joo, Min-Kyu
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 6 vom: 30. Feb., Seite e1805860
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:31
|g year:2019
|g number:6
|g day:30
|g month:02
|g pages:e1805860
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|u http://dx.doi.org/10.1002/adma.201805860
|3 Volltext
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