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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201805047
|2 doi
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|a pubmed24n0971.xml
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|a (DE-627)NLM291376576
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|a (NLM)30506822
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|a DE-627
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|e rakwb
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|a eng
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|a Thind, Arashdeep Singh
|e verfasserin
|4 aut
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|a Atomic Structure and Electrical Activity of Grain Boundaries and Ruddlesden-Popper Faults in Cesium Lead Bromide Perovskite
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 30.01.2019
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a To evaluate the role of planar defects in lead-halide perovskites-cheap, versatile semiconducting materials-it is critical to examine their structure, including defects, at the atomic scale and develop a detailed understanding of their impact on electronic properties. In this study, postsynthesis nanocrystal fusion, aberration-corrected scanning transmission electron microscopy, and first-principles calculations are combined to study the nature of different planar defects formed in CsPbBr3 nanocrystals. Two types of prevalent planar defects from atomic resolution imaging are observed: previously unreported Br-rich [001](210)∑5 grain boundaries (GBs) and Ruddlesden-Popper (RP) planar faults. The first-principles calculations reveal that neither of these planar faults induce deep defect levels, but their Br-deficient counterparts do. It is found that the ∑5 GB repels electrons and attracts holes, similar to an n-p-n junction, and the RP planar defects repel both electrons and holes, similar to a semiconductor-insulator-semiconductor junction. Finally, the potential applications of these findings and their implications to understand the planar defects in organic-inorganic lead-halide perovskites that have led to solar cells with extremely high photoconversion efficiencies are discussed
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|a Journal Article
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|a Ruddlesden-Popper faults
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|a density-functional theory
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|a grain boundaries
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|a lead-halide perovskites
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|a scanning transmission electron microscopy
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|a Luo, Guangfu
|e verfasserin
|4 aut
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1 |
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|a Hachtel, Jordan A
|e verfasserin
|4 aut
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|a Morrell, Maria V
|e verfasserin
|4 aut
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|a Cho, Sung Beom
|e verfasserin
|4 aut
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|a Borisevich, Albina Y
|e verfasserin
|4 aut
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|a Idrobo, Juan-Carlos
|e verfasserin
|4 aut
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|a Xing, Yangchuan
|e verfasserin
|4 aut
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|a Mishra, Rohan
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 4 vom: 21. Jan., Seite e1805047
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:31
|g year:2019
|g number:4
|g day:21
|g month:01
|g pages:e1805047
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|u http://dx.doi.org/10.1002/adma.201805047
|3 Volltext
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