A MoS2 /PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility

© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 31(2019), 3 vom: 24. Jan., Seite e1806227
1. Verfasser: Wang, Shuiyuan (VerfasserIn)
Weitere Verfasser: Chen, Chunsheng, Yu, Zhihao, He, Yongli, Chen, Xiaoyao, Wan, Qing, Shi, Yi, Zhang, David Wei, Zhou, Hao, Wang, Xinran, Zhou, Peng
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2019
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D materials hybrid heterojunction synapses photoelectric dual modulation 3,4,9,10-perylenetetracarboxylic dianhydride Anhydrides Disulfides Perylene 5QD5427UN7 Molybdenum mehr... 81AH48963U molybdenum disulfide ZC8B4P503V
LEADER 01000naa a22002652 4500
001 NLM29116630X
003 DE-627
005 20231225070311.0
007 cr uuu---uuuuu
008 231225s2019 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201806227  |2 doi 
028 5 2 |a pubmed24n0970.xml 
035 |a (DE-627)NLM29116630X 
035 |a (NLM)30485567 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Wang, Shuiyuan  |e verfasserin  |4 aut 
245 1 2 |a A MoS2 /PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility 
264 1 |c 2019 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 10.06.2019 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status MEDLINE 
520 |a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a Just as biological synapses provide basic functions for the nervous system, artificial synaptic devices serve as the fundamental building blocks of neuromorphic networks; thus, developing novel artificial synapses is essential for neuromorphic computing. By exploiting the band alignment between 2D inorganic and organic semiconductors, the first multi-functional synaptic transistor based on a molybdenum disulfide (MoS2 )/perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) hybrid heterojunction, with remarkable short-term plasticity (STP) and long-term plasticity (LTP), is reported. Owing to the elaborate design of the energy band structure, both robust electrical and optical modulation are achieved through carriers transfer at the interface of the heterostructure, which is still a challenging task to this day. In electrical modulation, synaptic inhibition and excitation can be achieved simultaneously in the same device by gate voltage tuning. Notably, a minimum inhibition of 3% and maximum facilitation of 500% can be obtained by increasing the electrical number, and the response to different frequency signals indicates a dynamic filtering characteristic. It exhibits flexible tunability of both STP and LTP and synaptic weight changes of up to 60, far superior to previous work in optical modulation. The fully 2D MoS2 /PTCDA hybrid heterojunction artificial synapse opens up a whole new path for the urgent need for neuromorphic computation devices 
650 4 |a Journal Article 
650 4 |a 2D materials 
650 4 |a hybrid heterojunction synapses 
650 4 |a photoelectric dual modulation 
650 7 |a 3,4,9,10-perylenetetracarboxylic dianhydride  |2 NLM 
650 7 |a Anhydrides  |2 NLM 
650 7 |a Disulfides  |2 NLM 
650 7 |a Perylene  |2 NLM 
650 7 |a 5QD5427UN7  |2 NLM 
650 7 |a Molybdenum  |2 NLM 
650 7 |a 81AH48963U  |2 NLM 
650 7 |a molybdenum disulfide  |2 NLM 
650 7 |a ZC8B4P503V  |2 NLM 
700 1 |a Chen, Chunsheng  |e verfasserin  |4 aut 
700 1 |a Yu, Zhihao  |e verfasserin  |4 aut 
700 1 |a He, Yongli  |e verfasserin  |4 aut 
700 1 |a Chen, Xiaoyao  |e verfasserin  |4 aut 
700 1 |a Wan, Qing  |e verfasserin  |4 aut 
700 1 |a Shi, Yi  |e verfasserin  |4 aut 
700 1 |a Zhang, David Wei  |e verfasserin  |4 aut 
700 1 |a Zhou, Hao  |e verfasserin  |4 aut 
700 1 |a Wang, Xinran  |e verfasserin  |4 aut 
700 1 |a Zhou, Peng  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 31(2019), 3 vom: 24. Jan., Seite e1806227  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:31  |g year:2019  |g number:3  |g day:24  |g month:01  |g pages:e1806227 
856 4 0 |u http://dx.doi.org/10.1002/adma.201806227  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 31  |j 2019  |e 3  |b 24  |c 01  |h e1806227