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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1021/acs.langmuir.8b02737
|2 doi
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|a pubmed24n0969.xml
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|a DE-627
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Wang, Guoxiang
|e verfasserin
|4 aut
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| 245 |
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|a Shortening Nucleation Time to Enable Ultrafast Phase Transition in Zn1Sb7Te12 Pseudo-Binary Alloy
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 04.02.2019
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|a Date Revised 15.02.2019
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Zn1Sb7Te12 thin films have been deposited by magnetron co-sputtering of ZnTe and Sb2Te3 targets. The microstructure, phase-change speed, optical cycling stability, and crystallization kinetics have been investigated during thermal annealing and laser irradiation. The thermal-annealed and laser-irradiated films give a clear evidence of the coexistence of trigonal Sb2Te3 and cubic ZnTe phases, which are homogeneously distributed in a single alloy as confirmed by advanced scanning transmission electron microscopy. The formation of both phases increases the initial nucleation sites, leading to the rapid phase-change speed in the Zn1Sb7Te12 film. The film has a minimum crystallization time of ∼3 ns at 70 mW with almost no incubation period for the formation of critical nuclei compared to Ge2Sb2Te5 and other Zn-based films. Moreover, the complete crystallization of Zn1Sb7Te12 thin films is achieved within 10 ns. The ultrafast two-dimensional nucleation and crystal growth speed in Zn1Sb7Te12 obtained from the laser-irradiated system is almost 7 times faster compared to that in Ge2Sb2Te5 film. Controlling the crystallization process through doping ZnTe into Sb2Te3 is thus promising for the development of high-speed optical switching technology
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Lotnyk, Andriy
|e verfasserin
|4 aut
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|a Nie, Qiuhua
|e verfasserin
|4 aut
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|a Wang, Rongping
|e verfasserin
|4 aut
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|a Shen, Xiang
|e verfasserin
|4 aut
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| 700 |
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|a Lu, Yegang
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 34(2018), 50 vom: 18. Dez., Seite 15143-15149
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
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| 773 |
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|g volume:34
|g year:2018
|g number:50
|g day:18
|g month:12
|g pages:15143-15149
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|u http://dx.doi.org/10.1021/acs.langmuir.8b02737
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