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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201804945
|2 doi
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|a pubmed24n0968.xml
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|a (DE-627)NLM290501423
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|a (NLM)30417479
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Fu, Qundong
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Ultrasensitive 2D Bi2 O2 Se Phototransistors on Silicon Substrates
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 03.01.2019
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a 2D materials are considered as intriguing building blocks for next-generation optoelectronic devices. However, their photoresponse performance still needs to be improved for practical applications. Here, ultrasensitive 2D phototransistors are reported employing chemical vapor deposition (CVD)-grown 2D Bi2 O2 Se transferred onto silicon substrates with a noncorrosive transfer method. The as-transferred Bi2 O2 Se preserves high quality in contrast to the serious quality degradation in hydrofluoric-acid-assisted transfer. The phototransistors show a responsivity of 3.5 × 104 A W-1 , a photoconductive gain of more than 104 , and a time response in the order of sub-millisecond. With back gating of the silicon substrate, the dark current can be reduced to several pA. This yields an ultrahigh sensitivity with a specific detectivity of 9.0 × 1013 Jones, which is one of the highest values among 2D material photodetectors and two orders of magnitude higher than that of other CVD-grown 2D materials. The high performance of the phototransistor shown here together with the developed unique transfer technique are promising for the development of novel 2D-material-based optoelectronic applications as well as integrating with state-of-the-art silicon photonic and electronic technologies
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4 |
|a Journal Article
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4 |
|a 2D materials
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4 |
|a bismuth oxyselenide
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4 |
|a field-effect transistors
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| 650 |
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4 |
|a phototransistors
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| 650 |
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4 |
|a silicon substrates
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| 700 |
1 |
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|a Zhu, Chao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhao, Xiaoxu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Xingli
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chaturvedi, Apoorva
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhu, Chao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Xiaowei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zeng, Qingsheng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhou, Jiadong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Fucai
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tay, Beng Kang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Hua
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Pennycook, Stephen J
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Zheng
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 1 vom: 01. Jan., Seite e1804945
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
8 |
|g volume:31
|g year:2019
|g number:1
|g day:01
|g month:01
|g pages:e1804945
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| 856 |
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|u http://dx.doi.org/10.1002/adma.201804945
|3 Volltext
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|a GBV_ILN_350
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|a AR
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|d 31
|j 2019
|e 1
|b 01
|c 01
|h e1804945
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