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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201804682
|2 doi
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|a pubmed24n0967.xml
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|a (DE-627)NLM290272351
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|a (NLM)30393917
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Wang, Xinsheng
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Potential 2D Materials with Phase Transitions
|b Structure, Synthesis, and Device Applications
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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| 500 |
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|a Date Completed 13.11.2019
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Layered materials with phase transitions, such as charge density wave (CDW) and magnetic and dipole ordering, have potential to be exfoliated into monolayers and few-layers and then become a large and important subfamily of two-dimensional (2D) materials. Benefitting from enriched physical properties from the collective interactions, long-range ordering, and related phase transitions, as well as the atomic thickness yet having nondangling bonds on the surface, 2D phase-transition materials have vast potential for use in new-concept and functional devices. Here, potential 2D phase-transition materials with CDWs and magnetic and dipole ordering, including transition metal dichalcogenides, transition metal halides, metal thio/selenophosphates, chromium silicon/germanium tellurides, and more, are introduced. The structures and experimental phase-transition properties are summarized for the bulk materials and some of the obtained monolayers. In addition, recent experimental progress on the synthesis and measurement of monolayers, such as 1T-TaS2 , CrI3 , and Cr2 Ge2 Te6 , is reviewed
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4 |
|a Journal Article
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|a Review
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4 |
|a 2D materials
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| 650 |
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4 |
|a metal thiophosphates and selenophosphates
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| 650 |
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4 |
|a phase transitions
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| 650 |
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4 |
|a transition metal dichalcogenides
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| 650 |
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4 |
|a transition metal halides
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| 700 |
1 |
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|a Song, Zhigang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wen, Wen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Haining
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Juanxia
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Dang, Chunhe
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hossain, Mongur
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Iqbal, Muhammad Ahsan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xie, Liming
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 45 vom: 01. Nov., Seite e1804682
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:31
|g year:2019
|g number:45
|g day:01
|g month:11
|g pages:e1804682
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| 856 |
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|u http://dx.doi.org/10.1002/adma.201804682
|3 Volltext
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