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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1021/acs.langmuir.8b02171
|2 doi
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|a pubmed25n0966.xml
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|a DE-627
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|e rakwb
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|a eng
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|a Liu, Xinxin
|e verfasserin
|4 aut
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|a High Response, Self-Powered Photodetector Based on the Monolayer MoS2/P-Si Heterojunction with Asymmetric Electrodes
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 28.01.2019
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|a Date Revised 28.01.2019
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Here, a self-powered photodetector based on the monolayer MoS2/P-Si heterojunction with asymmetric electrodes was fabricated. The MoS2/p-Si heterojunction photodetector with asymmetric electrodes offers the advantages over the conventional heterojunction photodetector on optoelectronic applications in terms of strong built-in electric field and fast photogenerated carrier separation and transport. Significantly, the MoS2/P-Si heterojunction exhibited an obvious photovoltaic effect, which can be used as the self-powered photodetector operating without any bias voltage. At a voltage bias of 0 V, the photocurrent of the detector is 23 nA, and its photoresponse/recovery time is 84 ms/136 ms. When at bias, the detector shows a ratio of photocurrent to dark current up to 3120, high responsivity of 117 A W-1, and fast photoresponse/recovery time of 74 ms/115 ms. Our work illustrates the great potential of the MoS2/P-Si heterojunction device with asymmetric electrodes on photovoltaic applications
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Li, Feng
|e verfasserin
|4 aut
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|a Xu, Minxuan
|e verfasserin
|4 aut
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|a Shen, Tao
|e verfasserin
|4 aut
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|a Yang, Zonglin
|e verfasserin
|4 aut
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|a Fan, Weili
|e verfasserin
|4 aut
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|a Qi, Junjie
|e verfasserin
|4 aut
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1985
|g 34(2018), 47 vom: 27. Nov., Seite 14151-14157
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
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|g volume:34
|g year:2018
|g number:47
|g day:27
|g month:11
|g pages:14151-14157
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|u http://dx.doi.org/10.1021/acs.langmuir.8b02171
|3 Volltext
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