High Response, Self-Powered Photodetector Based on the Monolayer MoS2/P-Si Heterojunction with Asymmetric Electrodes

Here, a self-powered photodetector based on the monolayer MoS2/P-Si heterojunction with asymmetric electrodes was fabricated. The MoS2/p-Si heterojunction photodetector with asymmetric electrodes offers the advantages over the conventional heterojunction photodetector on optoelectronic applications...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1985. - 34(2018), 47 vom: 27. Nov., Seite 14151-14157
1. Verfasser: Liu, Xinxin (VerfasserIn)
Weitere Verfasser: Li, Feng, Xu, Minxuan, Shen, Tao, Yang, Zonglin, Fan, Weili, Qi, Junjie
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2018
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article Research Support, Non-U.S. Gov't
LEADER 01000caa a22002652 4500
001 NLM290095670
003 DE-627
005 20250224073944.0
007 cr uuu---uuuuu
008 231225s2018 xx |||||o 00| ||eng c
024 7 |a 10.1021/acs.langmuir.8b02171  |2 doi 
028 5 2 |a pubmed25n0966.xml 
035 |a (DE-627)NLM290095670 
035 |a (NLM)30375876 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Liu, Xinxin  |e verfasserin  |4 aut 
245 1 0 |a High Response, Self-Powered Photodetector Based on the Monolayer MoS2/P-Si Heterojunction with Asymmetric Electrodes 
264 1 |c 2018 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 28.01.2019 
500 |a Date Revised 28.01.2019 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a Here, a self-powered photodetector based on the monolayer MoS2/P-Si heterojunction with asymmetric electrodes was fabricated. The MoS2/p-Si heterojunction photodetector with asymmetric electrodes offers the advantages over the conventional heterojunction photodetector on optoelectronic applications in terms of strong built-in electric field and fast photogenerated carrier separation and transport. Significantly, the MoS2/P-Si heterojunction exhibited an obvious photovoltaic effect, which can be used as the self-powered photodetector operating without any bias voltage. At a voltage bias of 0 V, the photocurrent of the detector is 23 nA, and its photoresponse/recovery time is 84 ms/136 ms. When at bias, the detector shows a ratio of photocurrent to dark current up to 3120, high responsivity of 117 A W-1, and fast photoresponse/recovery time of 74 ms/115 ms. Our work illustrates the great potential of the MoS2/P-Si heterojunction device with asymmetric electrodes on photovoltaic applications 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
700 1 |a Li, Feng  |e verfasserin  |4 aut 
700 1 |a Xu, Minxuan  |e verfasserin  |4 aut 
700 1 |a Shen, Tao  |e verfasserin  |4 aut 
700 1 |a Yang, Zonglin  |e verfasserin  |4 aut 
700 1 |a Fan, Weili  |e verfasserin  |4 aut 
700 1 |a Qi, Junjie  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Langmuir : the ACS journal of surfaces and colloids  |d 1985  |g 34(2018), 47 vom: 27. Nov., Seite 14151-14157  |w (DE-627)NLM098181009  |x 1520-5827  |7 nnns 
773 1 8 |g volume:34  |g year:2018  |g number:47  |g day:27  |g month:11  |g pages:14151-14157 
856 4 0 |u http://dx.doi.org/10.1021/acs.langmuir.8b02171  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_22 
912 |a GBV_ILN_350 
912 |a GBV_ILN_721 
951 |a AR 
952 |d 34  |j 2018  |e 47  |b 27  |c 11  |h 14151-14157