New Insights into Planar Defects in Layered α-MoO3 Crystals
The observation of regular ( h0 l) planar defects in α-MoO3 crystals can be traced back to over 60 years ago. Two mechanisms have been proposed to interpret the formation of the planar defects. One is related to the diffusion of oxygen vacancies because of thermal-driven release of oxygen atoms in v...
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1992. - 34(2018), 46 vom: 20. Nov., Seite 14003-14011 |
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| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2018
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids |
| Schlagworte: | Journal Article Research Support, Non-U.S. Gov't |
| Zusammenfassung: | The observation of regular ( h0 l) planar defects in α-MoO3 crystals can be traced back to over 60 years ago. Two mechanisms have been proposed to interpret the formation of the planar defects. One is related to the diffusion of oxygen vacancies because of thermal-driven release of oxygen atoms in vacuum and the consequent crystallographic shear of α-MoO3. The other is associated with redox reactions of moisture and/or hydrocarbons that give rise to H xMoO3 precipitates. Here, we report that regularly spaced (302) planar defects can be introduced into α-MoO3 belt crystals by heating in liquid sulfur at 300 °C. These defects are undetectable by both atomic force microscopy and scanning electron microscopy at the crystal surface. Raman scattering enhancement and weakening have been observed for different phonon modes of α-MoO3 at the (302) planar defects as probed from the (010) surface. Their comparisons with the Raman scattering enhancements at the edges and the argon-plasma-induced Raman spectral evolutions of the as-grown α-MoO3 belt crystals provide new insights into the planar defects with regard to their formation and characteristics |
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| Beschreibung: | Date Completed 25.01.2019 Date Revised 25.01.2019 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1520-5827 |
| DOI: | 10.1021/acs.langmuir.8b03102 |