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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201804541
|2 doi
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|a pubmed24n0965.xml
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|a (DE-627)NLM289535093
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|a (NLM)30318655
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|a DE-627
|b ger
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|e rakwb
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|a eng
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|a Li, Liang
|e verfasserin
|4 aut
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|a Highly In-Plane Anisotropic 2D GeAs2 for Polarization-Sensitive Photodetection
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 12.12.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Due to the intriguing anisotropic optical and electrical properties, low-symmetry 2D materials are attracting a lot of interest both for fundamental studies and fabricating novel electronic and optoelectronic devices. Identifying new promising low-symmetry 2D materials will be rewarding toward the evolution of nanoelectronics and nano-optoelectronics. In this work, germanium diarsenide (GeAs2 ), a group IV-V semiconductor with novel low-symmetry puckered structure, is introduced as a favorable highly anisotropic 2D material into the rapidly growing 2D family. The structural, vibrational, electrical, and optical in-plane anisotropy of GeAs2 is systematically investigated both theoretically and experimentally, combined with thickness-dependent studies. Polarization-sensitive photodetectors based on few-layer GeAs2 exhibit highly anisotropic photodetection behavior with lineally dichroic ratio up to ≈2. This work on GeAs2 will excite interests in the less exploited regime of group IV-V compounds
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|a Journal Article
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|a 2D
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|a GeAs2
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|a anisotropy
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|a photodetectors
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|a polarization
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|a Gong, Penglai
|e verfasserin
|4 aut
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1 |
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|a Sheng, Daopeng
|e verfasserin
|4 aut
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1 |
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|a Wang, Shuao
|e verfasserin
|4 aut
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1 |
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|a Wang, Weike
|e verfasserin
|4 aut
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|a Zhu, Xiangde
|e verfasserin
|4 aut
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|a Shi, Xingqiang
|e verfasserin
|4 aut
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1 |
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|a Wang, Fakun
|e verfasserin
|4 aut
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1 |
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|a Han, Wei
|e verfasserin
|4 aut
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1 |
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|a Yang, Sanjun
|e verfasserin
|4 aut
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| 700 |
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|a Liu, Kailang
|e verfasserin
|4 aut
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| 700 |
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|a Li, Huiqiao
|e verfasserin
|4 aut
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| 700 |
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|a Zhai, Tianyou
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 50 vom: 20. Dez., Seite e1804541
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:30
|g year:2018
|g number:50
|g day:20
|g month:12
|g pages:e1804541
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|u http://dx.doi.org/10.1002/adma.201804541
|3 Volltext
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