Defect Engineering for Modulating the Trap States in 2D Photoconductors

Defect Engineering for Modulating the Trap States in 2D Photoconductors

© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - (2018) vom: 31. Aug., Seite e1804332
1. Verfasser: Jiang, Jie (VerfasserIn)
Weitere Verfasser: Ling, Chongyi, Xu, Tao, Wang, Wenhui, Niu, Xianghong, Zafar, Amina, Yan, Zhenzhong, Wang, Xiaomu, You, Yumeng, Sun, Litao, Lu, Junpeng, Wang, Jinlan, Ni, Zhenhua
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2018
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D ReS2 defect engineering density functional theory photoconductive gain trap states
LEADER 01000caa a22002652 4500
001 NLM288064380
003 DE-627
005 20250224011758.0
007 cr uuu---uuuuu
008 231225s2018 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201804332  |2 doi 
028 5 2 |a pubmed25n0960.xml 
035 |a (DE-627)NLM288064380 
035 |a (NLM)30168633 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Jiang, Jie  |e verfasserin  |4 aut 
245 1 0 |a Defect Engineering for Modulating the Trap States in 2D Photoconductors 
264 1 |c 2018 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Revised 27.02.2024 
500 |a published: Print-Electronic 
500 |a Citation Status Publisher 
520 |a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a Defect-induced trap states are essential in determining the performance of semiconductor photodetectors. The de-trap time of carriers from a deep trap can be prolonged by several orders of magnitude as compared to shallow traps, resulting in additional decay/response time of the device. Here, it is demonstrated that the trap states in 2D ReS2 can be efficiently modulated by defect engineering through molecule decoration. The deep traps that greatly prolong the response time can be mostly filled by protoporphyrin molecules. At the same time, carrier recombination and shallow traps in-turn play dominant roles in determining the decay time of the device, which can be several orders of magnitude faster than the as-prepared device. Moreover, the specific detectivity of the device is enhanced (as high as ≈1.89 × 1013 Jones) due to the significant reduction of  the dark current through charge transfer between ReS2 and molecules. Defect engineering of trap states therefore provides a solution to achieve photodetectors with both high responsivity and fast response 
650 4 |a Journal Article 
650 4 |a 2D ReS2 
650 4 |a defect engineering 
650 4 |a density functional theory 
650 4 |a photoconductive gain 
650 4 |a trap states 
700 1 |a Ling, Chongyi  |e verfasserin  |4 aut 
700 1 |a Xu, Tao  |e verfasserin  |4 aut 
700 1 |a Wang, Wenhui  |e verfasserin  |4 aut 
700 1 |a Niu, Xianghong  |e verfasserin  |4 aut 
700 1 |a Zafar, Amina  |e verfasserin  |4 aut 
700 1 |a Yan, Zhenzhong  |e verfasserin  |4 aut 
700 1 |a Wang, Xiaomu  |e verfasserin  |4 aut 
700 1 |a You, Yumeng  |e verfasserin  |4 aut 
700 1 |a Sun, Litao  |e verfasserin  |4 aut 
700 1 |a Lu, Junpeng  |e verfasserin  |4 aut 
700 1 |a Wang, Jinlan  |e verfasserin  |4 aut 
700 1 |a Ni, Zhenhua  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g (2018) vom: 31. Aug., Seite e1804332  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g year:2018  |g day:31  |g month:08  |g pages:e1804332 
856 4 0 |u http://dx.doi.org/10.1002/adma.201804332  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |j 2018  |b 31  |c 08  |h e1804332