Efficient and Layer-Dependent Exciton Pumping across Atomically Thin Organic-Inorganic Type-I Heterostructures

© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - (2018) vom: 30. Aug., Seite e1803986
1. Verfasser: Zhang, Linglong (VerfasserIn)
Weitere Verfasser: Sharma, Ankur, Zhu, Yi, Zhang, Yuhan, Wang, Bowen, Dong, Miheng, Nguyen, Hieu T, Wang, Zhu, Wen, Bo, Cao, Yujie, Liu, Boqing, Sun, Xueqian, Yang, Jiong, Li, Ziyuan, Kar, Arara, Shi, Yi, Macdonald, Daniel, Yu, Zongfu, Wang, Xinran, Lu, Yuerui
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2018
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D materials binding energy exciton pumping organic-inorganic type-I heterostructures
LEADER 01000caa a22002652 4500
001 NLM287978192
003 DE-627
005 20240229161933.0
007 cr uuu---uuuuu
008 231225s2018 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201803986  |2 doi 
028 5 2 |a pubmed24n1308.xml 
035 |a (DE-627)NLM287978192 
035 |a (NLM)30159929 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Zhang, Linglong  |e verfasserin  |4 aut 
245 1 0 |a Efficient and Layer-Dependent Exciton Pumping across Atomically Thin Organic-Inorganic Type-I Heterostructures 
264 1 |c 2018 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Revised 27.02.2024 
500 |a published: Print-Electronic 
500 |a Citation Status Publisher 
520 |a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a The fundamental light-matter interactions in monolayer transition metal dichalcogenides might be significantly engineered by hybridization with their organic counterparts, enabling intriguing optoelectronic applications. Here, atomically thin organic-inorganic (O-I) heterostructures, comprising monolayer MoSe2 and mono-/few-layer single-crystal pentacene samples, are fabricated. These heterostructures show type-I band alignments, allowing efficient and layer-dependent exciton pumping across the O-I interfaces. The interfacial exciton pumping has much higher efficiency (>86 times) than the photoexcitation process in MoSe2 , although the pentacene layer has much lower optical absorption than MoSe2 . This highly enhanced pumping efficiency is attributed to the high quantum yield in pentacene and the ultrafast energy transfer between the O-I interface. Furthermore, those organic counterparts significantly modulate the bindings of charged excitons in monolayer MoSe2 via their precise dielectric environment engineering. The results open new avenues for exploring fundamental phenomena and novel optoelectronic applications using atomically thin O-I heterostructures 
650 4 |a Journal Article 
650 4 |a 2D materials 
650 4 |a binding energy 
650 4 |a exciton pumping 
650 4 |a organic-inorganic 
650 4 |a type-I heterostructures 
700 1 |a Sharma, Ankur  |e verfasserin  |4 aut 
700 1 |a Zhu, Yi  |e verfasserin  |4 aut 
700 1 |a Zhang, Yuhan  |e verfasserin  |4 aut 
700 1 |a Wang, Bowen  |e verfasserin  |4 aut 
700 1 |a Dong, Miheng  |e verfasserin  |4 aut 
700 1 |a Nguyen, Hieu T  |e verfasserin  |4 aut 
700 1 |a Wang, Zhu  |e verfasserin  |4 aut 
700 1 |a Wen, Bo  |e verfasserin  |4 aut 
700 1 |a Cao, Yujie  |e verfasserin  |4 aut 
700 1 |a Liu, Boqing  |e verfasserin  |4 aut 
700 1 |a Sun, Xueqian  |e verfasserin  |4 aut 
700 1 |a Yang, Jiong  |e verfasserin  |4 aut 
700 1 |a Li, Ziyuan  |e verfasserin  |4 aut 
700 1 |a Kar, Arara  |e verfasserin  |4 aut 
700 1 |a Shi, Yi  |e verfasserin  |4 aut 
700 1 |a Macdonald, Daniel  |e verfasserin  |4 aut 
700 1 |a Yu, Zongfu  |e verfasserin  |4 aut 
700 1 |a Wang, Xinran  |e verfasserin  |4 aut 
700 1 |a Lu, Yuerui  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g (2018) vom: 30. Aug., Seite e1803986  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g year:2018  |g day:30  |g month:08  |g pages:e1803986 
856 4 0 |u http://dx.doi.org/10.1002/adma.201803986  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |j 2018  |b 30  |c 08  |h e1803986