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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201802902
|2 doi
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|a pubmed24n1308.xml
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|a (DE-627)NLM287486486
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|a (NLM)30109765
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Guan, Mengmeng
|e verfasserin
|4 aut
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|a Ionic Modulation of the Interfacial Magnetism in a Bilayer System Comprising a Heavy Metal and a Magnetic Insulator for Voltage-Tunable Spintronic Devices
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|c 2018
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|a Text
|b txt
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 27.02.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The voltage modulation of yttrium iron garnet (YIG) is of practical and theoretical significance; due to its advantages of compactness, high-speed response, and energy efficiency, it can be used for various spintronic applications, including spin-Hall, spin-pumping, and spin-Seebeck effects. In this study, a significant ferromagnetic resonance change is achieved within the YIG/Pt bilayer heterostructures uisng ionic modulation, which is accomplished by modifying the interfacial magnetism in the deposited "capping" platinum layer. With a small voltage bias of 4.5 V, a large ferromagnetic field shift of 690 Oe is achieved in heterostructures of YIG (13 nm)/Pt (3 nm)/(ionic liquid, IL)/(Au capacitor). The remarkable magnetoelectric (ME) tunability comes from the additional and voltage-induced ferromagnetic ordering, caused by uncompensated d-orbital electrons in the Pt metal layer. Confirmed by first-principle calculations, this finding paves the way for novel voltage-tunable YIG-based spintronics
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|a Journal Article
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|a interfaces
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|a ionic liquid gating
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|a magnetism
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|a magnetoelectric coupling
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|a yttrium iron garnets
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|a Wang, Lei
|e verfasserin
|4 aut
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|a Zhao, Shishun
|e verfasserin
|4 aut
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|a Zhou, Ziyao
|e verfasserin
|4 aut
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|a Dong, Guohua
|e verfasserin
|4 aut
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|a Su, Wei
|e verfasserin
|4 aut
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|a Min, Tai
|e verfasserin
|4 aut
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|a Ma, Jing
|e verfasserin
|4 aut
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|a Hu, Zhongqiang
|e verfasserin
|4 aut
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|a Ren, Wei
|e verfasserin
|4 aut
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|a Ye, Zuo-Guang
|e verfasserin
|4 aut
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|a Nan, Ce-Wen
|e verfasserin
|4 aut
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|a Liu, Ming
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2018) vom: 14. Aug., Seite e1802902
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g year:2018
|g day:14
|g month:08
|g pages:e1802902
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|u http://dx.doi.org/10.1002/adma.201802902
|3 Volltext
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|j 2018
|b 14
|c 08
|h e1802902
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