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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201804137
|2 doi
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|a pubmed24n0958.xml
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|a (DE-627)NLM287405672
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|a (NLM)30101569
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|a DE-627
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|e rakwb
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|a eng
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|a Wang, Juanhong
|e verfasserin
|4 aut
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|a All-Solution-Processed Pure Formamidinium-Based Perovskite Light-Emitting Diodes
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 27.09.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a All-solution-processed pure formamidinium-based perovskite light-emitting diodes (PeLEDs) with record performance are successfully realized. It is found that the FAPbBr3 device is hole dominant. To achieve charge carrier balance, on the anode side, PEDOT:PSS 8000 is employed as the hole injection layer, replacing PEDOT:PSS 4083 to suppress the hole current. On the cathode side, the solution-processed ZnO nanoparticle (NP) is used as the electron injection layer in regular PeLEDs to improve the electron current. With the smallest ZnO NPs (2.9 nm) as electron injection layer (EIL), the solution-processed PeLED exhibits a highest forward viewing power efficiency of 22.3 lm W-1 , a peak current efficiency of 21.3 cd A-1 , and an external quantum efficiency of 4.66%. The maximum brightness reaches a record 1.09 × 105 cd m-2 . A record lifetime T50 of 436 s is achieved at the initial brightness of 10 000 cd m-2 . Not only do PEDOT:PSS 8000 HIL and ZnO NPs EIL modulate the injected charge carriers to reach charge balance, but also they prevent the exciton quenching at the interface between the charge injection layer and the light emission layer. The subbandgap turn-on voltage is attributed to Auger-assisted energy up-conversion process
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|a Journal Article
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|a ZnO nanoparticles
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|a all-solution process
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|a charge balance
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|a formamidinium-based perovskite light-emitting diodes
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|a subgap electroluminescence
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|a Song, Chen
|e verfasserin
|4 aut
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|a He, Zhiwei
|e verfasserin
|4 aut
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|a Mai, Chaohuang
|e verfasserin
|4 aut
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|a Xie, Gancheng
|e verfasserin
|4 aut
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|a Mu, Lan
|e verfasserin
|4 aut
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|a Cun, Yangke
|e verfasserin
|4 aut
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|a Li, Jiali
|e verfasserin
|4 aut
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|a Wang, Jian
|e verfasserin
|4 aut
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|a Peng, Junbiao
|e verfasserin
|4 aut
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|a Cao, Yong
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 39 vom: 01. Sept., Seite e1804137
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:30
|g year:2018
|g number:39
|g day:01
|g month:09
|g pages:e1804137
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|u http://dx.doi.org/10.1002/adma.201804137
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