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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201803244
|2 doi
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|a pubmed24n0957.xml
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|a (DE-627)NLM287309452
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|a (NLM)30091807
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Zhang, Fan
|e verfasserin
|4 aut
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|a Semimetal-Semiconductor Transitions for Monolayer Antimonene Nanosheets and Their Application in Perovskite Solar Cells
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 10.10.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Antimonene-based 2D materials are attracting increasing research interest due to their superior physicochemical properties and promising applications in next-generation electronics and optoelectronics devices. However, the semiconductor properties of antimonene are still at the theoretical simulation stage and are not experimentally verified, significantly restricting its applications in specific areas. In this study, the semiconductor properties of monolayer antimonene nanosheets are experimentally verified. It is found that the obtained semiconductive antimonene nanosheets (SANs) exhibit indirect bandgap properties, with photoluminescence (PL) bandgap at about 2.33 eV and PL lifetime of 4.3 ns. Moreover, the obtained SANs are ideal for the hole extraction layer in planar inverted perovskite solar cells (PVSCs) and significantly enhance the device performance due to fast hole extraction and efficient hole transfer at the perovskite/hole transport layer interface. Overall, these findings look promising for the future prospects of antimonene in electronics and optoelectronics
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|a Journal Article
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|a 2D materials
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|a antimonene oxides
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|a perovskite solar cells
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4 |
|a semiconductive antimonene
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|a semimetal-semiconductor transitions
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1 |
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|a He, Junjie
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xiang, Yuren
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zheng, Kai
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xue, Bin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ye, Shuai
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Peng, Xiao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hao, Yuying
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lian, Jiarong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zeng, Pengju
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Qu, Junle
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Song, Jun
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 38 vom: 06. Sept., Seite e1803244
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:30
|g year:2018
|g number:38
|g day:06
|g month:09
|g pages:e1803244
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|u http://dx.doi.org/10.1002/adma.201803244
|3 Volltext
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