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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201802951
|2 doi
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|a pubmed24n0957.xml
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|a (NLM)30085381
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|a DE-627
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|a eng
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|a Park, Minsu
|e verfasserin
|4 aut
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|a Efficient Solid-State Photoluminescence of Graphene Quantum Dots Embedded in Boron Oxynitride for AC-Electroluminescent Device
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 19.09.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Emerging graphene quantum dots (GQDs) have received much attention for use as next-generation light-emitting diodes. However, in the solid-state, π-interaction-induced aggregation-caused photoluminescence (PL) quenching (ACQ) in GQDs makes it challenging to realize high-performance devices. Herein, GQDs incorporated with boron oxynitride (GQDBNO) are prepared from a mixture of GQDs, boric acid, and urea in water via one-step microwave heating. Due to the effective dispersion in the BNO matrix, ACQ is significantly suppressed, resulting in high PL quantum yields (PL-QYs) of up to 36.4%, eightfold higher than that of pristine GQD in water. The PL-QY enhancement results from an increase in the spontaneous emission rate of GQDs due to the surrounding BNO matrix, which provides a high-refractive-index material and fluorescence energy transfer from the larger-gap BNO donor to the smaller-gap GQD acceptor. A high solid-state PL-QY makes the GQD@BNO an ideal active material for use in AC powder electroluminescent (ACPEL) devices, with the luminance of the first working GQD-based ACPEL device exceeding 283 cd m-2 . This successful demonstration shows promise for the use of GQDs in the field of low-cost, ecofriendly electroluminescent devices
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|a Journal Article
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|a AC-electroluminescent device
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|a GQDs
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|a boron oxynitride
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|a graphene quantum dots
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|a photoluminescence
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|a Yoon, Hyewon
|e verfasserin
|4 aut
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|a Lee, Jaeho
|e verfasserin
|4 aut
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|a Kim, Jungmo
|e verfasserin
|4 aut
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|a Lee, Jinho
|e verfasserin
|4 aut
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|a Lee, Seong-Eui
|e verfasserin
|4 aut
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|a Yoo, Seunghyup
|e verfasserin
|4 aut
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|a Jeon, Seokwoo
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 38 vom: 15. Sept., Seite e1802951
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:30
|g year:2018
|g number:38
|g day:15
|g month:09
|g pages:e1802951
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|u http://dx.doi.org/10.1002/adma.201802951
|3 Volltext
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