Photonic Synapses Based on Inorganic Perovskite Quantum Dots for Neuromorphic Computing

© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 30(2018), 38 vom: 24. Sept., Seite e1802883
1. Verfasser: Wang, Yan (VerfasserIn)
Weitere Verfasser: Lv, Ziyu, Chen, Jinrui, Wang, Zhanpeng, Zhou, Ye, Zhou, Li, Chen, Xiaoli, Han, Su-Ting
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2018
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article charge trapping flash memory perovskite photonic synapse quantum dots Calcium Compounds Oxides 12194-71-7 Titanium D1JT611TNE
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520 |a Inspired by the biological neuromorphic system, which exhibits a high degree of connectivity to process huge amounts of information, photonic memory is expected to pave a way to overcome the von Neumann bottleneck for nonconventional computing. Here, a photonic flash memory based on all-inorganic CsPbBr3 perovskite quantum dots (QDs) is demonstrated. The heterostructure formed between the CsPbBr3 QDs and semiconductor layer serves as a basis for optically programmable and electrically erasable characteristics of the memory device. Furthermore, synapse functions including short-term plasticity, long-term plasticity, and spike-rate-dependent plasticity are emulated at the device level. The photonic potentiation and electrical habituation are implemented and the synaptic weight exhibits multiple wavelength response from 365, 450, 520 to 660 nm. These results may locate the stage for further thrilling novel advances in perovskite-based memories 
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700 1 |a Lv, Ziyu  |e verfasserin  |4 aut 
700 1 |a Chen, Jinrui  |e verfasserin  |4 aut 
700 1 |a Wang, Zhanpeng  |e verfasserin  |4 aut 
700 1 |a Zhou, Ye  |e verfasserin  |4 aut 
700 1 |a Zhou, Li  |e verfasserin  |4 aut 
700 1 |a Chen, Xiaoli  |e verfasserin  |4 aut 
700 1 |a Han, Su-Ting  |e verfasserin  |4 aut 
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