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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201801908
|2 doi
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|a pubmed24n1308.xml
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|a (DE-627)NLM28627261X
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|a (NLM)29984556
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Li, Ziwei
|e verfasserin
|4 aut
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| 245 |
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|a Tailoring MoS2 Valley-Polarized Photoluminescence with Super Chiral Near-Field
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 27.02.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Transition metal dichalcogenides with intrinsic spin-valley degrees of freedom hold great potentials for applications in spintronic and valleytronic devices. MoS2 monolayer possesses two inequivalent valleys in the Brillouin zone, with each valley coupling selectively with circularly polarized photons. The degree of valley polarization (DVP) is a parameter to characterize the purity of valley-polarized photoluminescence (PL) of MoS2 monolayer. Usually, the detected values of DVP in MoS2 monolayer show achiral property under optical excitation of opposite helicities due to reciprocal phonon-assisted intervalley scattering process. Here, it is reported that valley-polarized PL of MoS2 can be tailored through near-field interaction with plasmonic chiral metasurface. The resonant field of the chiral metasurface couples with valley-polarized excitons, and tailors the measured PL spectra in the far-field, resulting in observation of chiral DVP of MoS2 -metasurface under opposite helicities excitations. Valley-contrast PL in the chiral heterostructure is also observed when illuminated by linearly polarized light. The manipulation of valley-polarized PL in 2D materials using chiral metasurface represents a viable route toward valley-polaritonic devices
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|a Journal Article
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|a MoS2
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|a exciton-plasmon interactions
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|a metasurface
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|a photoluminescence
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| 700 |
1 |
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|a Liu, Changxu
|e verfasserin
|4 aut
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1 |
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|a Rong, Xin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Luo, Yang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cheng, Haotian
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zheng, Liheng
|e verfasserin
|4 aut
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1 |
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|a Lin, Feng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shen, Bo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gong, Yongji
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Shuang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Fang, Zheyu
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2018) vom: 08. Juli, Seite e1801908
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g year:2018
|g day:08
|g month:07
|g pages:e1801908
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|u http://dx.doi.org/10.1002/adma.201801908
|3 Volltext
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|j 2018
|b 08
|c 07
|h e1801908
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