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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201802379
|2 doi
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|a pubmed24n1308.xml
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|a DE-627
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|a eng
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| 100 |
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|a Liu, Ao
|e verfasserin
|4 aut
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|a Room-Temperature Solution-Synthesized p-Type Copper(I) Iodide Semiconductors for Transparent Thin-Film Transistors and Complementary Electronics
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 27.02.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Here, room-temperature solution-processed inorganic p-type copper iodide (CuI) thin-film transistors (TFTs) are reported for the first time. The spin-coated 5 nm thick CuI film has average hole mobility (µFE ) of 0.44 cm2 V-1 s-1 and on/off current ratio of 5 × 102 . Furthermore, µFE increases to 1.93 cm2 V-1 s-1 and operating voltage significantly reduces from 60 to 5 V by using a high permittivity ZrO2 dielectric layer replacing traditional SiO2 . Transparent complementary inverters composed of p-type CuI and n-type indium gallium zinc oxide TFTs are demonstrated with clear inverting characteristics and voltage gain over 4. These outcomes provide effective approaches for solution-processed inorganic p-type semiconductor inks and related electronics
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|a Journal Article
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|a inorganic p-type semiconductor
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|a low voltage
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|a room-temperature synthesis
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|a solution process
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|a thin-film transistor
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|a Zhu, Huihui
|e verfasserin
|4 aut
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|a Park, Won-Tae
|e verfasserin
|4 aut
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|a Kang, Seok-Ju
|e verfasserin
|4 aut
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|a Xu, Yong
|e verfasserin
|4 aut
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|a Kim, Myung-Gil
|e verfasserin
|4 aut
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|a Noh, Yong-Young
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2018) vom: 04. Juli, Seite e1802379
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g year:2018
|g day:04
|g month:07
|g pages:e1802379
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|u http://dx.doi.org/10.1002/adma.201802379
|3 Volltext
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