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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201801548
|2 doi
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|a pubmed24n1308.xml
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|a (DE-627)NLM286174154
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|a (NLM)29974526
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Yang, Jing-Ting
|e verfasserin
|4 aut
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| 245 |
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|a Artificial Synapses Emulated by an Electrolyte-Gated Tungsten-Oxide Transistor
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 27.02.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Considering that the human brain uses ≈1015 synapses to operate, the development of effective artificial synapses is essential to build brain-inspired computing systems. In biological synapses, the voltage-gated ion channels are very important for regulating the action-potential firing. Here, an electrolyte-gated transistor using WO3 with a unique tunnel structure, which can emulate the ionic modulation process of biological synapses, is proposed. The transistor successfully realizes synaptic functions of both short-term and long-term plasticity. Short-term plasticity is mimicked with the help of electrolyte ion dynamics under low electrical bias, whereas the long-term plasticity is realized using proton insertion in WO3 under high electrical bias. This is a new working approach to control the transition from short-term memory to long-term memory using different gate voltage amplitude for artificial synapses. Other essential synaptic behaviors, such as paired pulse facilitation, the depression and potentiation of synaptic weight, as well as spike-timing-dependent plasticity are also implemented in this artificial synapse. These results provide a new recipe for designing synaptic electrolyte-gated transistors through the electrostatic and electrochemical effects
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|a Journal Article
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|a artificial synapse
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|a electrolyte gating
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|a synaptic transistor
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|a tungsten oxide films
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| 700 |
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|a Ge, Chen
|e verfasserin
|4 aut
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| 700 |
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|a Du, Jian-Yu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huang, He-Yi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a He, Meng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Can
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lu, Hui-Bin
|e verfasserin
|4 aut
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| 700 |
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|a Yang, Guo-Zhen
|e verfasserin
|4 aut
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| 700 |
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|a Jin, Kui-Juan
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2018) vom: 04. Juli, Seite e1801548
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g year:2018
|g day:04
|g month:07
|g pages:e1801548
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|u http://dx.doi.org/10.1002/adma.201801548
|3 Volltext
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|a GBV_USEFLAG_A
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|a SYSFLAG_A
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| 912 |
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|a GBV_NLM
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| 912 |
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|a GBV_ILN_350
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| 951 |
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|a AR
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|j 2018
|b 04
|c 07
|h e1801548
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