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20240229161735.0 |
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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201706364
|2 doi
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|a pubmed24n1308.xml
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|a (DE-627)NLM285492500
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|a (NLM)29904984
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|a DE-627
|b ger
|c DE-627
|e rakwb
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| 041 |
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|a eng
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| 100 |
1 |
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|a Liu, Ao
|e verfasserin
|4 aut
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| 245 |
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|a Solution Processed Metal Oxide High-κ Dielectrics for Emerging Transistors and Circuits
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 27.02.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The electronic functionalities of metal oxides comprise conductors, semiconductors, and insulators. Metal oxides have attracted great interest for construction of large-area electronics, particularly thin-film transistors (TFTs), for their high optical transparency, excellent chemical and thermal stability, and mechanical tolerance. High-permittivity (κ) oxide dielectrics are a key component for achieving low-voltage and high-performance TFTs. With the expanding integration of complementary metal oxide semiconductor transistors, the replacement of SiO2 with high-κ oxide dielectrics has become urgently required, because their provided thicker layers suppress quantum mechanical tunneling. Toward low-cost devices, tremendous efforts have been devoted to vacuum-free, solution processable fabrication, such as spin coating, spray pyrolysis, and printing techniques. This review focuses on recent progress in solution processed high-κ oxide dielectrics and their applications to emerging TFTs. First, the history, basics, theories, and leakage current mechanisms of high-κ oxide dielectrics are presented, and the underlying mechanism for mobility enhancement over conventional SiO2 is outlined. Recent achievements of solution-processed high-κ oxide materials and their applications in TFTs are summarized and traditional coating methods and emerging printing techniques are introduced. Finally, low temperature approaches, e.g., ecofriendly water-induced, self-combustion reaction, and energy-assisted post treatments, for the realization of flexible electronics and circuits are discussed
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|a Journal Article
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|a Review
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|a field-effect transistors
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|a high-κ dielectrics
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|a metal oxide insulator
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|a solution processing
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|a thin-film transistors
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| 700 |
1 |
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|a Zhu, Huihui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Sun, Huabin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xu, Yong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Noh, Yong-Young
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2018) vom: 14. Juni, Seite e1706364
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g year:2018
|g day:14
|g month:06
|g pages:e1706364
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|u http://dx.doi.org/10.1002/adma.201706364
|3 Volltext
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| 912 |
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|a GBV_USEFLAG_A
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| 912 |
|
|
|a SYSFLAG_A
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| 912 |
|
|
|a GBV_NLM
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| 912 |
|
|
|a GBV_ILN_350
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| 951 |
|
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|a AR
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| 952 |
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|j 2018
|b 14
|c 06
|h e1706364
|