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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201801885
|2 doi
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|a pubmed24n0951.xml
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|a (DE-627)NLM285374494
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|a (NLM)29892982
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Wei, Lujun
|e verfasserin
|4 aut
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| 245 |
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|a Full Electric Control of Exchange Bias at Room Temperature by Resistive Switching
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 24.08.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Electric control of exchange bias (EB) is of vital importance in energy-efficient spintronics. Although many attempts have been made during the past decade, each has its own limitations for operation and thus falls short of full direct and reversible electrical control of EB at room temperature. Here, a novel approach is proposed by virtue of unipolar resistive switching to accomplish this task in a Si/SiO2 /Pt/Co/NiO/Pt device. By applying certain voltages, the device displays obvious EB in the high-resistance-state while negligible EB in the low-resistance state. Conductive filaments forming in the NiO layer and rupturing near the Co-NiO interface are considered to play dominant roles in determining the combined resistive switching and EB phenomena. This work paves a new way for designing multifunctional and nonvolatile magnetoelectric random access memory devices
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|a Journal Article
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|a conductive filaments
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|a electric control
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|a exchange bias
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|a resistive switching
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|a Hu, Zhenzhong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Du, Guanxiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yuan, Yuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Ji
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tu, Hongqing
|e verfasserin
|4 aut
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1 |
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|a You, Biao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhou, Shiming
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Qu, Jiangtao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Hongwei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zheng, Rongkun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hu, Yong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Du, Jun
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 30 vom: 11. Juli, Seite e1801885
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:30
|g year:2018
|g number:30
|g day:11
|g month:07
|g pages:e1801885
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|u http://dx.doi.org/10.1002/adma.201801885
|3 Volltext
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