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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201706262
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|a eng
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1 |
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|a Teng, Feng
|e verfasserin
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|a Photoelectric Detectors Based on Inorganic p-Type Semiconductor Materials
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|c 2018
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|a Text
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|a ƒaComputermedien
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|a Date Completed 26.09.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Photoelectric detectors are the central part of modern photodetection systems with numerous commercial and scientific applications. p-Type semiconductor materials play important roles in optoelectronic devices. Photodetectors based on p-type semiconductor materials have attracted a great deal of attention in recent years because of their unique properties. Here, a comprehensive summary of the recent progress mainly on photodetectors based on inorganic p-type semiconductor materials is presented. Various structures, including photoconductors, phototransistors, homojunctions, heterojunctions, p-i-n junctions, and metal-semiconductor junctions of photodetectors based on inorganic p-type semiconductor materials, are discussed and summarized. Perspectives and an outlook, highlighting the promising future directions of this research field, are also given
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|a Journal Article
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|a inorganic materials
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|a p-type materials
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|a photodetectors
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|a semiconductors
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|a Hu, Kai
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1 |
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|a Ouyang, Weixin
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|a Fang, Xiaosheng
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|t Advanced materials (Deerfield Beach, Fla.)
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|u http://dx.doi.org/10.1002/adma.201706262
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