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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201704002
|2 doi
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|a pubmed24n0949.xml
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|a DE-627
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|e rakwb
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|a eng
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| 100 |
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|a Choi, Jaeho
|e verfasserin
|4 aut
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|a Organic-Inorganic Hybrid Halide Perovskites for Memories, Transistors, and Artificial Synapses
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|c 2018
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|a Text
|b txt
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 17.10.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Fascinating characteristics of halide perovskites (HPs), which cannot be seen in conventional semiconductors and metal oxides, have boosted the application of HPs in electronic devices beyond optoelectronics such as solar cells, photodetectors, and light-emitting diodes. Here, recent advances in HP-based memory and logic devices such as resistive-switching memories (i.e., resistive random access memory (RRAM) or memristors), transistors, and artificial synapses are reviewed, focusing on inherently exotic properties of HPs: i) tunable bandgap, ii) facile majority carrier control, iii) fast ion migration, and iv) superflexibility. Various fabrication techniques of HP thin films from solution-based methods to vacuum processes are introduced. Up-to-date work in the field, emphasizing the compositional flexibility of HPs, suggest that HPs are promising candidates for next-generation electronic devices. Taking advantages of their unique electrical properties, low-cost and low-temperature synthesis, and compositional and mechanical flexibility, HPs have enormous potential to provide a new platform for future electronic devices and explosively intensive studies will pave the way in finding new HP materials beyond conventional silicon-based semiconductors to keep up with "More-than-Moore" times
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|a Journal Article
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|a Review
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|a artificial synapses
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|a halide perovskites
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|a ion migration
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|a memory
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| 650 |
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|a transistors
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|a Han, Ji Su
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hong, Kootak
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Soo Young
|e verfasserin
|4 aut
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| 700 |
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|a Jang, Ho Won
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 42 vom: 11. Okt., Seite e1704002
|w (DE-627)NLM098206397
|x 1521-4095
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|g volume:30
|g year:2018
|g number:42
|g day:11
|g month:10
|g pages:e1704002
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|u http://dx.doi.org/10.1002/adma.201704002
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