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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201801639
|2 doi
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|a pubmed24n0948.xml
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|a (DE-627)NLM284547514
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|a (NLM)29809283
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Zhao, Shishun
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 24.08.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Electric field (E-field) modulation of perpendicular magnetic anisotropy (PMA) switching, in an energy-efficient manner, is of great potential to realize magnetoelectric (ME) memories and other ME devices. Voltage control of the spin-reorientation transition (SRT) that allows the magnetic moment rotating between the out-of-plane and the in-plane direction is thereby crucial. In this work, a remarkable magnetic anisotropy field change up to 1572 Oe is achieved under a small operation voltage of 4 V through ionic liquid (IL) gating control of SRT in Au/[DEME]+ [TFSI]- /Pt/(Co/Pt)2 /Ta capacitor heterostructures at room temperature, corresponding to a large ME coefficient of 378 Oe V-1 . As revealed by both ferromagnetic resonance measurements and magnetic domain evolution observation, the magnetization can be switched stably and reversibly between the out-of-plane and in-plane directions via IL gating. The key mechanism, revealed by the first-principles calculation, is that the IL gating process influences the interfacial spin-orbital coupling as well as net Rashba magnetic field between the Co and Pt layers, resulting in the modulation of the SRT and in-plane/out-of-plane magnetization switching. This work demonstrates a unique IL-gated PMA with large ME tunability and paves a way toward IL gating spintronic/electronic devices such as voltage tunable PMA memories
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|a Journal Article
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|a ferromagnetic resonance
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|a ionic liquid gating
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|a perpendicular magnetic anisotropy
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4 |
|a spin-reorientation transition
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4 |
|a voltage control of magnetism
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|a Wang, Lei
|e verfasserin
|4 aut
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1 |
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|a Zhou, Ziyao
|e verfasserin
|4 aut
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|a Li, Chunlei
|e verfasserin
|4 aut
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1 |
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|a Dong, Guohua
|e verfasserin
|4 aut
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1 |
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|a Zhang, Le
|e verfasserin
|4 aut
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|a Peng, Bin
|e verfasserin
|4 aut
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1 |
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|a Min, Tai
|e verfasserin
|4 aut
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1 |
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|a Hu, Zhongqiang
|e verfasserin
|4 aut
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1 |
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|a Ma, Jing
|e verfasserin
|4 aut
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1 |
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|a Ren, Wei
|e verfasserin
|4 aut
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1 |
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|a Ye, Zuo-Guang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Wei
|e verfasserin
|4 aut
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1 |
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|a Yu, Pu
|e verfasserin
|4 aut
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|a Nan, Ce-Wen
|e verfasserin
|4 aut
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| 700 |
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|a Liu, Ming
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 30 vom: 15. Juli, Seite e1801639
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:30
|g year:2018
|g number:30
|g day:15
|g month:07
|g pages:e1801639
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|u http://dx.doi.org/10.1002/adma.201801639
|3 Volltext
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