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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201801720
|2 doi
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|a pubmed24n1308.xml
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|a (DE-627)NLM284539872
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|a (NLM)29808501
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Choi, Jongmin
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Activated Electron-Transport Layers for Infrared Quantum Dot Optoelectronics
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|c 2018
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| 336 |
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 27.02.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Photovoltaic (PV) materials such as perovskites and silicon are generally unabsorptive at wavelengths longer than 1100 nm, leaving a significant portion of the IR solar spectrum unharvested. Small-bandgap colloidal quantum dots (CQDs) are a promising platform to offer tandem complementary IR PV solutions. Today, the best performing CQD PVs use zinc oxide (ZnO) as an electron-transport layer. However, these electrodes require ultraviolet (UV)-light activation to overcome the low carrier density of ZnO, precluding the realization of CQD tandem photovoltaics. Here, a new sol-gel UV-free electrode based on Al/Cl hybrid doping of ZnO (CAZO) is developed. Al heterovalent doping provides a strong n-type character while Cl surface passivation leads to a more favorable band alignment for electron extraction. CAZO CQD IR solar cell devices exhibit, at wavelengths beyond the Si bandgap, an external quantum efficiency of 73%, leading to an additional 0.92% IR power conversion efficiency without UV activation. Conventional ZnO devices, on the other hand, add fewer than 0.01 power points at these operating conditions
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|a Journal Article
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|a Infrared
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|a ZnO
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|a conductivity
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|a doping
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|a quantum dot solar cells
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|a Jo, Jea Woong
|e verfasserin
|4 aut
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|a de Arquer, F Pelayo García
|e verfasserin
|4 aut
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|a Zhao, Yong-Biao
|e verfasserin
|4 aut
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|a Sun, Bin
|e verfasserin
|4 aut
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|a Kim, Junghwan
|e verfasserin
|4 aut
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|a Choi, Min-Jae
|e verfasserin
|4 aut
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|a Baek, Se-Woong
|e verfasserin
|4 aut
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1 |
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|a Proppe, Andrew H
|e verfasserin
|4 aut
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1 |
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|a Seifitokaldani, Ali
|e verfasserin
|4 aut
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|a Nam, Dae-Hyun
|e verfasserin
|4 aut
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|a Li, Peicheng
|e verfasserin
|4 aut
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|a Ouellette, Olivier
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|4 aut
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|a Kim, Younghoon
|e verfasserin
|4 aut
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|a Voznyy, Oleksandr
|e verfasserin
|4 aut
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|a Hoogland, Sjoerd
|e verfasserin
|4 aut
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|a Kelley, Shana O
|e verfasserin
|4 aut
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|a Lu, Zheng-Hong
|e verfasserin
|4 aut
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| 700 |
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|a Sargent, Edward H
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2018) vom: 28. Mai, Seite e1801720
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g year:2018
|g day:28
|g month:05
|g pages:e1801720
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|u http://dx.doi.org/10.1002/adma.201801720
|3 Volltext
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|j 2018
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|h e1801720
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