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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201800327
|2 doi
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|a pubmed24n0947.xml
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|a (DE-627)NLM284287717
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|a (NLM)29782667
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Wang, Yan
|e verfasserin
|4 aut
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| 245 |
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|a Synergies of Electrochemical Metallization and Valance Change in All-Inorganic Perovskite Quantum Dots for Resistive Switching
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 21.08.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The in-depth understanding of ions' generation and movement inside all-inorganic perovskite quantum dots (CsPbBr3 QDs), which may lead to a paradigm to break through the conventional von Neumann bottleneck, is strictly limited. Here, it is shown that formation and annihilation of metal conductive filaments and Br- ion vacancy filaments driven by an external electric field and light irradiation can lead to pronounced resistive-switching effects. Verified by field-emission scanning electron microscopy as well as energy-dispersive X-ray spectroscopy analysis, the resistive switching behavior of CsPbBr3 QD-based photonic resistive random-access memory (RRAM) is initiated by the electrochemical metallization and valance change. By coupling CsPbBr3 QD-based RRAM with a p-channel transistor, the novel application of an RRAM-gate field-effect transistor presenting analogous functions of flash memory is further demonstrated. These results may accelerate the technological deployment of all-inorganic perovskite QD-based photonic resistive memory for successful logic application
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|a Journal Article
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|a RRAM
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|a ion vacancy
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|a metal conductive filament
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|a perovskite
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4 |
|a quantum dots
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1 |
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|a Lv, Ziyu
|e verfasserin
|4 aut
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1 |
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|a Liao, Qiufan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shan, Haiquan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Jinrui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhou, Ye
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhou, Li
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Xiaoli
|e verfasserin
|4 aut
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| 700 |
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|a Roy, Vellaisamy A L
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Zhanpeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xu, Zongxiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zeng, Yu-Jia
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Han, Su-Ting
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 28 vom: 21. Juli, Seite e1800327
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:30
|g year:2018
|g number:28
|g day:21
|g month:07
|g pages:e1800327
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|u http://dx.doi.org/10.1002/adma.201800327
|3 Volltext
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